The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer

NCU Institutional Repository > 理學院 > 物理研究所 > 期刊論文 > Item 987654321/39202

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39202

题名:	The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
作者:	Lin,CF;Chi,GC;Feng,MS;Guo,JD;Tsang,JS;Hong,JMH
贡献者:	物理研究所
关键词:	DEPOSITION;GROWTH
日期:	1996
上传时间:	2010-07-08 14:08:08 (UTC+8)
出版者:	中央大學
摘要:	The GaN buffer layer was grown on the sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) at 525 degrees C. The following 1.3 mu m epitaxial GaN growth was carried out at 1025 degrees C. We varied the ramping rate from 12.5 to 100 degrees C/min to study the quality of the epitaxial GaN. It has been found that the x-ray peak width, photoluminescence (PL) linewidth, Hall mobilities, and carrier concentrations of GaN epitaxial layer strongly depend on the in situ thermal ramping rate. An optimum thermal ramping rate was found to be of 20 degrees C/min. The maximum mobility is 435 cm(2)/V s at carrier concentration of 1.7 x 10(17) cm(-3). The minimum full width at half maximum (FWHM) of x ray and PL were 5.5 min and 12 meV occur at a ramping rate of 20 degrees C/min. The decrease of the mobility at high and low ramping rate can be attributed to the thermal stress and the reevaporation of the GaN buffer layer. (C) 1996 American Institute of Physics.
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[物理研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	529	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing