ELECTROMODULATION SPECTRA OF A SINGLE ALXGA1-XAS/GAAS MODULATION-DOPED HETEROJUNCTION - EXPERIMENT AND THEORY

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39227

Title:	ELECTROMODULATION SPECTRA OF A SINGLE ALXGA1-XAS/GAAS MODULATION-DOPED HETEROJUNCTION - EXPERIMENT AND THEORY
Authors:	LU,NH;HSU,TM
Contributors:	物理研究所
Keywords:	FRANZ-KELDYSH OSCILLATIONS;PHOTOREFLECTANCE CHARACTERIZATION;ELECTRIC-FIELD;GAAS;SEMICONDUCTORS;MODEL;HETEROSTRUCTURES;SPECTROSCOPY;TRANSITIONS;GAAS/GAALAS
Date:	1995
Issue Date:	2010-07-08 14:08:57 (UTC+8)
Publisher:	中央大學
Abstract:	Electroreflectance spectroscopy is applied to reexamine the theoretical model which has been devised to explicate the temperature-dependent photoreflectance spectra of single AlxGa1-xAs/GaAs modulation-doped heterojunctions. Building on the presumption that the modulation mechanism is mainly due to the electromodulation of the band bending in the buffer layer, we apply the Franz-Keldysh theory to simulate the photoreflectance and electroreflectance spectra at room temperature. As the sample temperature is decreased to 10 K in the photoreflectance experiment, there appears a large number of oscillations extending for more than ten periods. This phenomenon manifests existence of a fairly uniform electric field in the buffer layer.
Relation:	PHYSICAL REVIEW B
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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