MODELING TEMPERATURE-DEPENDENT PHOTOREFLECTANCE SPECTRA OF SINGLE ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS

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题名:	MODELING TEMPERATURE-DEPENDENT PHOTOREFLECTANCE SPECTRA OF SINGLE ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS
作者:	LU,NH;HSU,TM
贡献者:	物理研究所
关键词:	FRANZ-KELDYSH OSCILLATIONS;ELECTRIC-FIELD;ENERGY-LEVELS;GAAS;HETEROSTRUCTURE;SEMICONDUCTORS;SI;SPECTROSCOPY;TRANSITIONS;GAAS/GAALAS
日期:	1995
上传时间:	2010-07-08 14:09:16 (UTC+8)
出版者:	中央大學
摘要:	We attempt to deal with the physical processes involved in the temperature-dependent photoreflectance of single AlGaAs/GaAs modulation-doped heterojunction structures. Building on the assumption that photomodulation mechanism is due chiefly to modification of the band bending in the buffer layer, we apply the Franz-Keldysh theory to simulate the temperature-dependent photoreflectance spectra of single AlGaAs/GaAs modulation-doped heterojunction structures. In view of the nonuniformity of the electric field within the buffer layer, the field profile of which is calculated through the application of self-consistent variational approach, the WKB method is used to approximate the effective change in the dielectric function. A comparison between the experimental and the simulated results attests the validity of our assumption. The effects of temperature on the electric-field strengths, estimated from the extrema of the Franz-Keldysh oscillations, can be accounted for by considering the temperature dependence of the Fermi level. (C) 1995 American Institute of Physics.
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[物理研究所] 期刊論文

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