本研究在探討研磨頭氣壓分配在化學機械研磨晶圓膜厚移除製程上之影響。在研磨頭上製作數個氣體壓力控制區塊，並配合特定的研磨墊以及研磨液流量，加以特定的轉速，探討研磨頭內不同的氣體壓力控制區塊下施以不同的壓力，其晶圓膜厚移除的狀況。 在化學機械研磨晶圓膜厚移除製程上，常有膜厚移除不均的現象發生，為能解決膜厚移除不均的問題，有許多不同製程因子用來進行實驗，並進行控制以達到預期的膜厚移除。本研究利用在研磨頭內不同的氣控制區塊下施加不同的氣體壓力，研究不同的氣體壓力控制區塊下，壓力與膜厚移除量的關連性，藉以瞭解製程精度的可實行範圍。 本研究所進行的實驗量測，晶圓膜厚皆經由國際半導體標準級的量測儀器進行操作，以減少在量測儀器上所產生之實驗誤差，而可真正呈現最終的研究成果。 This study explores that gas distribution in different zone of polish head is how to affect thin film remove rate of wafer . In the reach study , the several gas zones are made on the polish head , select a specific polish pad , polish slurry flow rate , slurry flow rate and specific polish head RPM to explore that thin film remove rate of wafer is how to affect by gas distribution in different zone of polish head actually. In the CMP process , the remove rate of thin-file on the wafer is not easy to control the profile what the specification is , so implement the unstable remove rate is necessary . There are so many process parameter to tune these values to match the remove rate specification . The way is fast and direct to view how to affect by gas distribution in different zone of polish head actually on the study then tunning the best process recipes to create a requirement profile . In the experiment , these wafer are measure by KLA measure tool that they are famous to reduce experiment values inaccurary . It will be shown actual response in the full experiment .
