竹炭拋光矽晶圓特性之研究; Study the characteristics of the silicon wafer polishing combined the bamboo charcoal

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題名:	竹炭拋光矽晶圓特性之研究;Study the characteristics of the silicon wafer polishing combined the bamboo charcoal
作者:	林秉威;Ping-wei Lin
貢獻者:	機械工程研究所
關鍵詞:	拋光;表面粗糙度;比表面積;多孔性;竹炭研磨材;竹炭;surface roughness Ra;Bamboo charcoal;porosities;specific surface;polishing
日期:	2010-07-20
上傳時間:	2010-12-08 13:43:45 (UTC+8)
出版者:	國立中央大學
摘要:	本研究為提供一種竹炭複合拋光系統對矽晶圓試片進行拋光，其竹炭研磨材結構包含具有複數個中空管束狀之竹炭載體、複數個研磨顆粒。藉由自製壓力罐利用壓力將磨料傳輸至竹炭中空管束狀組織內，利用竹炭多孔性與比表面積大之特點吸附並將磨料灌注至試片表面進行研磨實驗。竹炭施壓於工件表面時，具中空管束狀竹炭載體中之研磨粒會對工件表面進行擦削之加工，同時因竹炭載體本身結構亦受到磨料之研磨作用而崩解，吸附於竹炭中空管束內之磨料亦因竹炭表層崩解而持續對工件表面進行加工，反覆研磨與竹炭表層崩解之過程，提升研磨拋光效果。本研究利用正越公司生產之精密單平面研磨機(M-15FS)與自製夾持竹炭載體之載具探討竹炭拋光對單晶矽晶圓在不同加工參數下之拋光改善效果，並針對每種參數的趨勢與結果進行分析與探討。經由實驗結果得到不同研磨料最佳參數組合，在適當的荷重與轉速下，以粒徑大小為0.3μm之氧化鋁粉與去離子水在重量百分濃度0.5wt%條件下，可於30min內將矽晶圓原始表面粗糙度Ra 0.273μm改善至表面粗糙度Ra 0.026μm左右，試片表面可達鏡面反射之效果；對於1μm粒徑之鑽石粉，其表面粗糙度可改善至Ra 0.021μm之鏡面效果，證明利用竹炭結合不同磨料之竹炭拋光研究，可獲得相當良好的表面改善效果。 In this study, a new system polishing wafer with abrasive of Al2O3 and daimond were studied, the system combined of bamboo charcoal and abrasive. The structure of bamboo charcoal existed many hollow tube, using the characteristic of large specific surface and porosities of bamboo charcoal to adsorption abrasive and through in the wafer surface by pressure. When manufacture start, the bamboo charcoal loading on the wafer surface, abrasive in bamboo charcoal will touch and wipe on wafer surface. At the same time, due to the structure of bamboo charcoal carrier itself is also disintegration by abrasive grinded, fractional abrasive in the hollow tube of bamboo charcoal are sustaining to the surface for processing. In this experiment, we use the polishing machine (M-15FS) by JENG-YUEH ENTERPRISE CO.,LTD. with Self-clamping of vehicles of Bamboo Charcoal to studied the improve effect of polishing, and, analyzed and discussed results under different processing parameters. The experimental results obtained by the optimal parameters of different abrasive, in the appropriate load and speed, the particle size is 0.3μm alumina powder with deionized water 0.5wt%, it can be original silicon wafer surface roughness Ra 0.273μm to improve the surface roughness Ra 0.026μm, the sample surface up to the reflection of mirror effect, for 1μm particle size diamond powder, the surface roughness can be improved to Ra 0.021μm of mirror effect. The good effect on the wafer surface obtained by use of bamboo charcoal combined with abrasive polishing are proved.
顯示於類別:	[機械工程研究所] 博碩士論文

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