紅外光學薄膜之研究; The research of infrared optical thin film

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題名:	紅外光學薄膜之研究;The research of infrared optical thin film
作者:	古士良;Shih-Liang Ku
貢獻者:	光電科學研究所
關鍵詞:	離子束;薄膜;Ion beam;Thin film
日期:	2010-06-02
上傳時間:	2010-12-08 14:20:10 (UTC+8)
出版者:	國立中央大學
摘要:	本文主要研究中紅外波段之光學薄膜，材料以鍺、一氧化矽及氮化矽為主，而有別於傳統的熱蒸鍍製程，本研究以離子束助鍍的製程方式製備上述薄膜，以期能在較低的溫度下鍍製出具備良好特性之紅外光學薄膜，並藉由紅外變角度光譜式橢圓偏光儀、傅氏轉換紅外線光譜儀、紫外-近紅外光光譜儀、X-ray光電子能譜儀、掃描式電子顯微鏡、原子力顯微鏡、X-ray 繞射儀、穿透式電子顯微鏡、奈米壓痕測試機等不同的量測儀器與分析方法，探討離子轟擊對各薄膜之組成成分、結晶狀態、微觀結構等結構特性，以及紅外波段光學特性的影響。實驗結果顯示，相較於傳統的熱蒸鍍製程，在離子束能量及電流密度等製程條件的選擇下，離子束助鍍可以有效地提升鍺與一氧化矽等薄膜的紅外光學及結構特性，同時也可鍍製出具有良好光學特性的氮化矽薄膜，且中紅外截止濾光鏡以及抗反射膜等多層膜的鍍製結果，也呈現相當優異的光學性能。相關的實驗結果驗證了以離子束助鍍法鍍製紅外光學薄膜之效益。 This thesis focus on the mid-infrared optical thin films including germanium (Ge), silicon monoxide (SiO) and silicon nitride (SiN) thin films. The difference from the conventional thermal evaporation process, these films were prepared by ion beam assisted deposition (IAD) process and expected to obtain the desirable properties at lower temperature. These films were analyzed using the infrared variable angle spectroscopic ellipsometry, Fourier transform infrared spectrometry, UV–NIR spectrophotometer, X-ray photoelectron spectrometry, scanning electron microscopy, atomic force microscopy, X-ray diffraction transmission electron microscopy and nano indenter. The influences of ion bombardment on the structural properties, such as composition, crystalline, and microstructure, and on the mid-infrared optical properties of these films were investigated. The results showed that compared the conventional thermal evaporation process, the mid-infrared optical and structural properties of Ge and SiO thin films could be effectively improved by using the selective conditions of the ion beam voltage and current density in the IAD process. In addition, the SiN thin film with good optical property could be obtained using the IAD technique. Furthermore, the mid-infrared edge filter and anti-reflection coating, which were prepared by using the IAD process, also exhibited the desirable optical performance. These results presented in this work indicated that the IAD technique would have a positive effect on the optical and structural properties of the infrared thin films.
顯示於類別:	[光電科學研究所] 博碩士論文

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