陽極氧化鋁製備及其在氫化非晶矽薄膜太陽能電池光捕捉效應的應用; Anodic Alumina Oxide Fabricated and Applied on Light-Trapping of a-Si:H Thin Film Solar Cells

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題名:	陽極氧化鋁製備及其在氫化非晶矽薄膜太陽能電池光捕捉效應的應用;Anodic Alumina Oxide Fabricated and Applied on Light-Trapping of a-Si:H Thin Film Solar Cells
作者:	林耿志;Geng-Jhih Lin
貢獻者:	光電科學研究所
關鍵詞:	陽極氧化鋁;表面電漿子;氫化非晶矽薄膜太陽能電池;光捕捉;light-trapping;Anodic Alumina Oxide(AAO);Surface Plasmon Polaritons(SPPs);a-Si:H thin film solar cells
日期:	2010-07-15
上傳時間:	2010-12-08 14:20:53 (UTC+8)
出版者:	國立中央大學
摘要:	陽極氧化鋁AAO(anodic alumina oxide)具有製作方便、大面積、規則性好、可調變週期性等優點。不論是製作奈米等級的蝕刻、沉積光罩或是特殊幾何形狀的碗型鋁，在太陽能電池、光子晶體波導皆有廣大應用。本論文主要研究為以陽極氧化鋁製作出具奈米碗型鋁微結構的鋁塊及奈米等級光罩兩種結構，並且以奈米碗型鋁微結構的鋁塊為n-i-p氫化非晶矽薄膜太陽能電池的基板，作為在光捕捉(light trapping)效應上的應用。碗型鋁基板的製備實驗中，我們分別利用化學和電化學拋光增加鋁塊的平整性，多次陽極氧化(multi-step anodization)的方法增加孔洞或是pre-site鋁的規則性。以0.5M、0.1M的氫氧化鈉和10wt%磷酸為移除氧化鋁蝕刻液，10wt%磷酸具有最佳移除氧化鋁的均向性。在外加電壓30V~70V，製作出週期41nm~126.5nm五個碗型微結構，且此週期和外加電壓具有d=-23.64+2.158V的線性關係。在奈米等級光罩製作中，以硫酸銅(CuSO4):鹽酸(HCl):DI water=3g:20ml:20ml為移除鋁的蝕刻液，利用漂浮方法(floating method)製作出奈米等級光罩。利用陽極氧化鋁製作規則性奈米碗型微結構的鋁塊，以此特殊結構鋁塊為基板的n-i-p氫化非晶矽薄膜太陽能電池，除了利用薄膜Febry-Perot效應來增加電池對光的吸收外，預期此結構能激發金屬表面電漿子SPPs(surface plasmon polaritons)，然而製作出的奈米碗型微結構只具有短程有序的週期，使得在角度解析光譜中而無明顯的顯現表面電漿子色散曲線。 Anodic alumina oxide (AAO) has several advantages: easy fabrication, huge area, good regularity, and tunable periods. The deposition and etching nano-mask or specific Bowl-Al geometry, which are fabricated through AAO method, had been applied on solar cells and photonics-crystal waveguide extensively. In this study, we fabricate two structures: nano-mask and Al bulk with nano bowl geometry. Besides, apply the Al bulk with nano bowl geometry as the substrate of n-i-p a-Si:H thin film solar cells to enhance light trapping. In the fabrication of Bowl-Al substrate, we use chemical polish, electrical-chemical polish, and multi-step anodization to promote planarization and regularity of pores or pre-site Al, respectively. We utilize 0.5M, 0.1M NaOH and 10wt% H3PO4 to remove Al2O3; the 10wt% H3PO4 has better isotropic etching. The fabricated periods from 41nm to 126.5nm shows linear relation d=-23.64+2.158V when the voltages varies from 30V to 70V. The mixed solution of CuSO4:HCl:DI Water=3g:20ml:20ml is applied to remove Al while fabricating Al2O3 nano-mask with floating method. The periodic Bowl-Al substrate (fabricated through AAO method) is applied as the substrate of n-i-p hydrogenated amorphous silicon thin film solar cells. The original Fabry-Perot resonance of thin film stacks supports light trapping and it increases the light absorption of cells. Additionally, the excitation of surface plasmon polaritons (SPPs) on the periodic metal surface was predicted. However, the dispersion curve of SPPs does not present in the angle-resolved reflectance spectrum due to the fabricated Bowl-Al structure presents periodic property in small domain.
顯示於類別:	[光電科學研究所] 博碩士論文

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