以金屬錫為靶材利用脈衝直流磁控濺鍍法鍍製FTO薄膜之研究; Research of Fluorine Doped Tin Oxide Films Prepared by Pulse DC Magnetron sputtering with Tin Target

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题名:	以金屬錫為靶材利用脈衝直流磁控濺鍍法鍍製FTO薄膜之研究;Research of Fluorine Doped Tin Oxide Films Prepared by Pulse DC Magnetron sputtering with Tin Target
作者:	陳品任;Pin-Jen Chen
贡献者:	光電科學研究所
关键词:	磁控濺鍍;氟;金屬靶;氧化錫;Tin Oxide;Magnetron Sputtering;FTO;Fluorine
日期:	2010-07-26
上传时间:	2010-12-08 14:21:49 (UTC+8)
出版者:	國立中央大學
摘要:	本論文以一新式製程方式，利用脈衝直流磁控濺鍍法（Pulsed DC Magnetron sputtering），使用價格便宜的純金屬錫靶材鍍製FTO（Fluorine-doped tin oxide）薄膜，在鍍膜過程中改變氬氣、氧氣、以及四氟化碳之氣體流量，探討在不同氣體流量下，FTO薄膜之電特性以及光學特性之改變，在通入適當流量之CF4的情況下鍍製之FTO單層膜，其最低電阻率為1.63×10-3 Ω-cm，而其在可見光波段之平均穿透率可達80.00%，相較於未通入CF4的SnO2單層膜，其電阻率下降了28倍。藉由不同的後退火方式，可達到更低的電阻率；將FTO薄膜在鍍膜完畢後，於真空中繼續以350 ℃退火一小時後，其電阻率可下降至1.23×10-3 Ω-cm；當薄膜置於通有forming gas（氣體混合比例H2:5%+N2:95%）的高溫爐管中以400 ℃退火一小時後，電阻率下降至1.26×10-3 Ω-cm；而當薄膜置於大氣下之高溫烤箱中以400 ℃退火一小時後，電阻率下降至1.38×10-3 Ω-cm。最後，我們將FTO薄膜覆蓋在ITO上，將ITO單層膜與ITO卅FTO雙層膜放入大氣下之高溫烤箱中退火一小時，當高溫到達400℃∼500℃時，ITO單層膜的電阻率上升了156.74 %∼344.07 %，而ITO卅FTO雙層膜的電阻率僅上升了1.27 %∼185.58 %，此乃FTO的熱穩定性保護了內層ITO的緣故。此ITO卅FTO雙層膜不僅降低了整體膜層的電阻率，也維持了TCO的高穿透率，並彌補了ITO單層膜在高溫之不穩定性，此種高熱穩定性之ITO卅FTO雙層膜可應用於太陽能電池之製作過程。 Transparent conducting fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates by pulsed DC magnetron sputtering from a cost saving method with tin metal target. Various gas flow rate were filled in the chamber during the deposition processes, and the resistivity of SnO2 films doped with fluorine decreased effectively compared to films without fluorine. The average transmittance is 80.00% and the resistivity is 1.63×10-3 Ω-cm (28 times less). We observed better electrical property of FTO films by various post heating treatments. With annealing temperature at 350 ℃ in vacuum, the lowest resistivity is 1.23×10-3 Ω-cm. With annealing temperature at 400 ℃ in forming gas (H2 : N2 = 5% : 95%) in furnace, the lowest resistivity is 1.26×10-3 Ω-cm. And with annealing temperature at 400 ℃ in air, the lowest resistivity is 1.38×10-3 Ω-cm. At last, FTO films were deposited on ITO layers. After the deposition process, single layer ITO and double layers ITO+FTO films were annealed at temperatures 400 ℃, 450 ℃, and 500 ℃ in air. At 400℃ to 500℃, the rate of change of ITO single layer resistivity range from 156.74 % to 344.07 %, but range from 1.27 % to 185.58 % for ITO+FTO double layers. This kind of ITO+FTO double layers can be applied in the production of doped solar cell.
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