以矽光學平台為基礎之4通道; x 10 Gbps光學連結模組之發射端 4-Channel x 10 Gbps Optical Interconnect Transmitter Module Based on Silicon Optical Bench

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题名:	以矽光學平台為基礎之4通道;x 10 Gbps光學連結模組之發射端 4-Channel x 10 Gbps Optical Interconnect Transmitter Module Based on Silicon Optical Bench
作者:	楊凌岡;Ling-Gang Yang
贡献者:	光電科學研究所
关键词:	光學連結模組;矽光學平台;Optical interconnect;SiOB;Silicon optical bench
日期:	2010-07-27
上传时间:	2010-12-08 14:22:08 (UTC+8)
出版者:	國立中央大學
摘要:	本論文提出具矽基光學平台(Silicon Optical Bench, SiOB)之微型化被動式光連結發射端模組，具體實現工作波段於850 nm具4通道 × 10 Gbps和工作波段於1310 nm具4通道 × 5 Gbps之光連結發射端模組技術，模組尺寸為5 × 5 mm2。在此架構中，矽基光連結發射端模組包含具單石化積體製程之矽基微光學平台(包含矽基微45度反射面、V型凹槽陣列)、10 GHz高頻傳輸線、與金錫銲料。利用混成構裝(Hybrid)方式，將面射型雷射以高精度之覆晶封裝(Flip-Chip)方式整合、八芯多模光纖(Fiber Ribbon)以被動對準之封裝方式整合。45度微反射面深度為110 μm，其製程誤差在6%之內，角度誤差為±0.5度，且表面粗糙度小於10 nm，對紅外波段的光具有良好光學品質；高頻傳輸線製程線寬變異控制在5%內，縱向及橫向空間變異控制在10%內，製程變異皆符合元件之光學準位1 dB誤差容忍度；工作波段於850 nm和1310 nm之模組光學準位1 dB誤差容忍度分別為20 μm和15 μm；在光耦合效率表現，光由面射型雷射發射經45度微反射面偏折90度後進入多模光纖的光耦合效率分別約為-3.5 dB和-1.1 dB，相鄰通道的串音準位皆在-30 dB以下；在高頻量測中，分別輸入10 Gbps (0.5 Vp-p, 15-bit PRBS)和5 Gbps (0.5 Vp-p, 15-bit PRBS)訊號，分別能通過OC-192及OC-96之國際規範。 In this thesis, two types of transmitter modules (Tx) for optical interconnect based on silicon-optical-bench (SiOB) had been developed. Two types are 850 nm with 4-channel × 10 Gbps (850nm-4x10G-Tx) and 1310 nm with 4-channel × 5 Gbps (1310nm-4x5G-Tx), respectively. The chip size of Tx is only 5 × 5 mm2. Tx includes a monolithic integration of silicon-based 45° micro-reflector, V-groove array, high-frequency transmission line of 10 GHz, and bonding pads with Au/Sn eutectic solder. All of Components are assembling through hybrid integration, vertical-cavity surface-emitting laser (VCSEL) is assembled by flip-chip bonding and fiber ribbon is inserted to V-groove array at specific position with highly precise-passive alignment. The depth of 45° micro-reflector can be reached to 110 μm by anisotropic wet etching process. Such this micro-reflector has good optical properties for infrared light. The light emanating from VCSEL can be deflected into multi-mode fiber (MMF) and the coupling efficiency of 850nm-4x10G-Tx and 1310nm-4x5G-Tx can be up to -3.5 dB and -1.1 dB, respectively. The cross-talk of inter-channel is less than 30 dB in these modules. Utilizing micro lithography, the process tolerances of 10 GHz transmission line are within 10%, and the optical 1 dB alignment tolerances are within 20 μm and 15 μm for 850nm-4x10G-Tx and 1310nm-4x5G-Tx, respectively. Eye patterns of the Tx are measured as the 15-bit PRBS with a data rate of 10 Gbps for 850nm-4x10G-Tx and 5Gbps for for 1310nm-4x5G-Tx.
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