氧硒化鋅薄膜之光學特性研究; Optical characteristics of ZnSeO thin film

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/43849

Title:	氧硒化鋅薄膜之光學特性研究;Optical characteristics of ZnSeO thin film
Authors:	陳星宏;Hsing-Hung Chen
Contributors:	物理研究所
Keywords:	硒化鋅;氧硒化鋅;ZnSe;ZnSeO
Date:	2010-06-28
Issue Date:	2010-12-08 14:23:00 (UTC+8)
Publisher:	國立中央大學
Abstract:	本篇論文利用光激發螢光光譜與光調製反射光譜來分析氧硒化鋅(ZnSe1-xOx)薄膜樣品的光學特性，氧濃度比例為0≦x≦0.097。在氧硒化鋅的室溫光激發螢光光譜中，我們觀察到樣品能隙隨氧濃度比例的增加會劇烈的縮小，此結果可用能帶互斥理論解釋。在變溫光激發螢光光譜實驗中，我們則觀察到樣品氧濃度比例為0<x≦0.070 之螢光訊號峰值隨溫度會產生S 型的變化，我們認為這是局域化激子轉變為自由激子之過程。另外我們利用光調製反射光譜實驗獲得各樣品能隙。我們利用能帶互斥理論分析光激發螢光光譜以及光調製反射光譜所得到訊號隨溫度的變化。 In this thesis, we have studied the optical characteristics of ZnSe1-xOx thin film (0≦x≦0.097) by using Photoluminescence (PL)spectroscopy and Photoreflectance (PR) spectroscopy. We observe the band gap decreases dramatically with increasing oxygen concentration by PL at room temperature, which can be explained by the band anticrossing model. We observe the S-shaped PL peaks (0<x≦0.070) evolve with temperature, we have considered this phenomenon which transits from localized exciton to free exciton. We have used PR to obtain the band gap of these samples. We have used the band anticrossing model to analyze these signals from PL and PR.
Appears in Collections:	[Graduate Institute of Physics] Electronic Thesis & Dissertation

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