摘 要 在本論文中，為獲得光電特性良好的透明前電極，首先探討沉積於玻璃及PET(polyester)基板上的ITO(indium-tin-oxide)透明電極薄膜製程，得到穿透度及導電性較佳透明電極薄膜當作太陽電池的前電極。接著利用氧及氮氣電漿處理聚亞醯胺 (polyimide,PI)基板表面，去除汙垢及修改表面特性，獲得較佳PI的接觸表面而後於經電漿處理過PI之上沉積鋁-矽-銅(Al/Si/Cu)充當太陽能電池的背電極。鋁-矽-銅薄膜有很好的反射性可增加太陽能電池的光吸收。在PI及PET基板上所製作出p-i-n非晶矽太陽能電池分別其轉換效率僅1.37×10-2 %和2.4×10-3 %。Abstract In this thesis, in order to obtain the transparent front electrode having good light transmittance and low resistivity, the process conditions for depositing ITO (indium tin oxide) on glass and PET(polyester)substrates were studied firstly. Then the N2- and O2-plasna were used to treat the surface of PI (polyimide) substrate to remove loosely bond surface contaminations and to provide intimate contact between the interacting materials on a molecular scale. The highly reflective aluminum Al (Al/Si/Cu) film deposited on plasma-treated PI substrate was used as back electrode and would increase the light-trapping. The conversion efficiencies of fabricated a-Si:H-based solar cells on PI and PET substrates were only 1.37×10-2 % and 2.4×10-3 % , respectively.
