應用於微波及毫米波頻段的通訊電路漸漸在生活中普及，而振盪器為通訊系統中不可或缺的電路。注入式振盪器即是利用額外注入訊號的方式改善振盪器的相位雜訊，並廣泛的被使用在射頻電路當中。在本論文中探討注入式鎖態的過程和原理，且透過相關文獻中注入式鎖態振盪器模型的推導，以便了解注入式鎖態振盪器的注入階數、鎖態範圍及相位雜訊等特性。 在本論文主要分成兩部份，首先討論藉由SiGe BiCMOS製程與使用ADS模擬軟體，實作出工作於K-band的壓控振盪器。設計重點為利用異質接面雙極性電晶體並聯金氧半場效電晶體當作可變電容器，使得振盪器具有較寬的調頻範圍；此振盪器最大的可調頻率範圍為16.5 GHz到19.85 GHz。第二部份是採用BiFET和GaAs pHEMT製程，分別實作出50 GHz以及75 GHz的次諧波注入式鎖態振盪器。這二個次諧波注入式鎖態振盪器具有低相位雜訊、寬頻鎖態範圍及高輸出功率的特性。最後討論使用壓控振盪器實現頻移鍵控信號的調變，並經由注入式鎖態振盪器達到頻移鍵控信號解調的效果。The communication circuits applied in microwave and millimeter-wave frequency ranges have being gradually popularized in our life. Among the circuits, the oscillator constitutes an important circuit in the communication system. The injection-locked oscillator can improves the phase noise of the output signal by means of additionally injecting signals. This thesis explores the process and principle of the injection-locked oscillator and the deductions on the injection-locked oscillator models based on the relevant literatures. This thesis is mainly divided into two parts. In the first part, it explores how to make voltage-controlled oscillator at K-band by using SiGe BiCMOS technology and ADS simulation software. The variable capacitor is implemented by connecting the heterojunction bipolar transistor (HBT) and the metal-oxide-semiconductor field-effect transistor (MOSFET) in parallel.Thus, this oscillator shows a wide tuning range. The adjustable frequency range is from16.5 GHz to 19.85 GHz. In the second part of thesis, 50 GHz and 75 GHz subharmonic injection-locked oscillators are designed and manufactured in BiFET and GaAs pHEMT technologies. The measured oscillator shows low phase noise, wide-band locking range, low power consumption and high output power. Finally, this thesis explores how to use voltage-controlled oscillator to realize the modulation for the frequency-shift keying (FSK) signals and to demonstrate the demodulating the FSK signals using the injection-locked oscillator.
