氮化鋁鎵/氮化鎵/氮化銦鎵電流散佈層應用於大面積氮化銦鎵發光二極體AlGaN/GaN/InGaN ; Current Spreading Layer Used in High Power InGaN Light Emitting Diodes

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题名:	氮化鋁鎵/氮化鎵/氮化銦鎵電流散佈層應用於大面積氮化銦鎵發光二極體AlGaN/GaN/InGaN;Current Spreading Layer Used in High Power InGaN Light Emitting Diodes
作者:	陳鵬壬;Peng-Ren Chen
贡献者:	電機工程研究所
关键词:	氮化銦鎵;發光二極體;電流散佈;Light emitting doide;InGaN;current spreading
日期:	2010-07-21
上传时间:	2010-12-09 13:52:59 (UTC+8)
出版者:	國立中央大學
摘要:	在白光發光二極體照明的應用上，需以大面積發光二極體提高輸出功率並且能有效提升轉換效率，達到節能、環保、低成本的高功率固態照明。但大面積發光二極體隨著高電流注入時，因 N 型氮化鎵半導體的電阻率大都大於 P 型透明導電層，所以會增加 N 型電極附近電流擁塞的情況，而造成元件局部熱累積並使得量子效率急速下降，本論文提供一雙異質接面“氮化鋁鎵/氮化鎵/氮化銦鎵”電子流散佈層，並利用此結構改善發光二極體尺寸大型化時出現之電流擁塞現象，並且對於結構模擬與光電特性有深入的研究與探討。本論文在光電特性探討方面，與傳統發光二極體相較之下，具單異質接面“氮化鋁鎵/氮化鎵”結構、雙異質接面“氮化鋁鎵/氮化鎵/氮化銦鎵”結構發光二極體的光強度改善，依序增強至 (在350 mA下) 93.7 mW、105.6 mW、115.2 mW。另一方面，由於在不同的異質結構上成長的量子井可能會受到應力的變化而改變量子井中的壓電效應，所以吾人以倒晶格向量空間量測具異質結構之量子井，觀察量子井的晶格應力變化，並配合量子井的光激發光波長定性極化分析，證明量子井受到極化效應卻不影響光輸出功率；並由量測得知光影像變異度依序降低至 (Ref @ 500 mA) 31.5 %、24.3 %、21.4 %，與高電流注入量測發光二極體的接面溫度依序降低為 (Ref @ 350 mA) 132.8 oC、120.1 oC、113.4 oC，可增加商業上元件使用的熱穩定性。In the application of white-light LED illumination, a bigger illuminating area is needed to increase output power and effectively raise conversion efficiency, further to achieve a high-power solid state lighting that can meet the requirements of energy saving, environment protection and low cost. However, the fact that the resistivity of N-type GaN semiconductor is greater than that of P-type transparent conducting layer can lead to current congestion around N-type electrode and result in local heat accumulation, which will drastically reduce quantum efficiency. In this study, a current spreading layer of dual- herterojunction (AlGaN/GaN/InGaN) was presented to improve the situation of current congestion when a LED of increased size is used. Additionally, a deeper exploration was conducted on structure simulation and photoelectric properties. In terms of the exploration of the photoelectric properties of LED with current spreading layer, comparison was made between luminous intensities of traditional GaN LED and LEDs with current spreading layer of heterojunctions of AlGaN/GaN and AlGaN/GaN/InGaN structures. The results showed that the luminous intensities of LED with current spreading layer of AlGaN/GaN and AlGaN/GaN/InGaN structures could be improved to 93.7 mW、105.6 mW、115.2 mW when 350mA is applied. On the other hand, due to piezoelectric polarization's possible influence on the quantum confined stark effect of multi-quantum well, multi-quantum well with hetero-structure was measured using reciprocal lattice vector space to observe its stress change. Moreover, a qualitative polarization analysis was conducted on the wavelength of the excited light emitted from multi-quantum well to prove the effect of quantum well polarization won't be affected by the output power of light. The measurements suggested that the light image uniformity variations were reduced to 31.5 %、24.3 %、21.4 % (Ref @ 500 mA) respectively and the temperatures measured when high current was applied were respectively lowered to 132.8 oC、120.1 oC、113.4 oC (Ref @ 350 mA), which proved that LED with current spreading layer presented in this study can improve the element's heat stability for commercial use.
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