離子佈植矽基板之固態磊晶成長動力與微奈米尺度下摻雜分佈行為; Solid State Epitaxy Growth Dynamics and Nano-Confined Dopant Distribution Probing of Ion Implanted Silicon Substrate

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題名:	離子佈植矽基板之固態磊晶成長動力與微奈米尺度下摻雜分佈行為;Solid State Epitaxy Growth Dynamics and Nano-Confined Dopant Distribution Probing of Ion Implanted Silicon Substrate
作者:	溫偉源
貢獻者:	物理學系
關鍵詞:	離子佈植;二微摻雜量測;奈米侷限;固態磊晶成長;ion implantation;two dimensional dopant profiling;nano-confinement;solid phase epitaxy growth;物理類
日期:	2010-08-01
上傳時間:	2011-07-13 16:23:36 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	本計劃為期三年，為本實驗室進行一系列在奈米尺度侷限矽基板下的離子佈植與退火相關動力學之研究。我們計劃設計與建構一光罩，在其上系統性的變化所形成之奈米結構尺度。我們利用半導體微奈米製程在矽基板上形成一實驗基座，用以研究在不同尺度侷限下經由離子佈植產生的缺陷與摻雜的交互作用。我們計劃建構並利用掃描靜電或電容顯微技術量測在微奈米侷限下摻雜的擴散與活化情形。本實驗研究的主要目的是以在奈米尺度侷限下缺陷產生與消失之非線性競爭觀點來瞭解其對奈米半導體元件門檻電壓的影響。同時,我們也希望藉由上述研究，能發展出一套實用的具奈米解析度之二維摻雜量測方法作為當下微奈米電子元件製造工業所用的分析技術。本研究計畫的另一項目為固態磊晶成長中非晶矽與晶體介面之不穩定動力研究。我們計劃設計與建構一視窗型高溫退火爐管作為同步量測離子佈植矽基材之時間解析反射率變化之用。我們計劃利用時間解析反射率變之相關性變化來瞭解非晶矽與晶體介面的成長前沿推進之不穩定發生之時間起點與該系統中離子佈植與退火條件之關係。其中我們計劃研究磷離子的存在對高濃度碳離子在矽基材之准穩態溶解度與該系統之固態磊晶成長速率的關係。我們並計劃結合前述所發展的掃描靜電或電容顯微技術來量測該系統中磷活化與碳溶解之競爭動力行為。本實驗研究的主要目的是為瞭解在具有強大內部張力應變下的複雜固態磊晶成長動力行為。同時我們也希望藉由上述研究，能發展出一套以離子佈植高濃度碳離子形成之張力應變源極/汲極之方法作為陰極金氧半導體中電子漂移率提升之用。我們希望進一步結合上述研究結果發展一個實用的離子佈植和退火方法在微奈米尺度侷限矽基板下來形成矽:碳合金之張力應變源極/汲極。我們並計劃進一步發展微奈米解析度的局部應力/應變量測技術來研究該系統中應變與摻雜的擴散和活化情形與其局部應變之關係。 The 3-year research project kick-starts our serial experimental studies on the dynamics of ion implantation related phenomena in nano-pattern silicon. We plan to design a systematic scaled layout in silicon wafers with varying proximity. Ion implantation and annealing are carried out in this template. The junctions are formed and are subjected to vary in term of diffusion and activation due to the difference in nano-confinement effect. An electrostatic force/ scanning capacitance microscopy (EFM/SCM) will be setup to probe the local dopant distribution and activation condition. Our major goal is to examine the detailed physics that affects the dopant behaviors in the light of non-linear competition of defect recombination pathway and defect induced dopant diffusion in small dimension (< 100 nm). Another goal is to develop a mature methodology for plane view/ cross section dopant profiling that can be used by microelectronic manufacturing community. The dynamics of solid phase epitaxy growth (SPEG) is another topic we seek to investigate in the scope of this project. We plan to design and construct an in situ time resolved reflectivity measurement system to study the instability onset in the amorphous/crystalline interface propagation front during SPEG. By measuring the reflectance and analyzing the time series of the reflectance correlation, we seek to understand the detailed dynamics of the instability onset. We plan to study the effect of phosphorous to metastable solubility and the SPEG rate of carbon. Combining with the constructed EFM/SCM system, we seek to understand the competition dynamics between carbon solubility and phosphorous activation. The goal here is to understand the complex SPEG dynamics with large intrinsic tensile strain. Another goal is to provide a proper way for forming Si:C alloy with high phosphorous activation, which can be used for NMOSFET electron mobility boosting. The SPEG study is expected to combine with the nano-patterned template and provide a platform for the study of Si:C NMOSFET stressor formation. Using TEM nano beam diffraction or Micro-Raman scattering for strain determination in nano-scale channel and SCM for dopant activation profiling, we seek to find the interplay between P activation and C incorporation in nano-scale. 研究期間：9908 ~ 10007
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
顯示於類別:	[物理學系] 研究計畫

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