本論文選擇在氮化鎵材料製作二維漸進式週期光子晶體共振腔，使光有效侷限於其中。以平面波展開法(Plane Wave Expansion, PWE) 與有限時域差分法(Finite-Difference-Time-Domain, FDTD)來分析漸進式週期光子晶體共振腔之特性，計算出結構參數，也以光侷限之方法來分析共振腔在垂直方向上的損耗，以及解釋為何高階模態會有較高的Q值。在室溫下架設微光激發光系統(Micro-Photoluminescence,???PL)，量測結果發現，當激發光源功率大於0.9 mW時，成功量得於波長於?=362 nm 之雷射訊號，以高斯擬合得到半高寬為0.04 nm，換算 Q值為1×104。 In this study, the photonic crystals nanocavity has been designed, fabricated, and characterized in GaN bulk materials with the heterostructure which could achieve extremely high-Q factors. The device characterization was performed at room temperature using a micro-photoluminescence system. We obtain a lasing signal whose full width at half maximum (FWHM) obtained by Gaussian curve fitting is ??=0.04 nm for ?=362 nm and the threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 17 kmW/cm2. The Q-factor of the cavity is as high as 104.
