本論文以一新式製程方式，利用脈衝直流磁控濺鍍法(Pulsed DC Magnetron sputtering)，使用價格便宜的純金屬鋅靶材鍍製FZO(Fluorine-doped zinc oxide)薄膜，在鍍膜過程中改變氫氣、氧氣、以及四氟化碳之氣體流量，探討在不同氣體流量下，FZO薄膜之電特性以及光學特性之改變。 從文獻得知，氫氣可在氧化鋅薄膜間隙裡形成shallow donor，可大量增加載子濃度，降低電阻率。 常溫製程下，FZO:H最低電阻率可達到8.2×10-4Ω-cm、遷移率10.1cm2/V-s、載子濃度7.52×1020cm-3，。 但在退火過程中，由於shallow donor的氫，極容易溢出薄膜，使載子濃度在500℃，從原先8×1020cm-3下降至5×1019cm-3，從此結果得知，FZO:H在高溫中使載子容易流失。 FZO:H雖不耐高溫，但在紅外光譜，表現極為出色；波長800~1800nm之平均穿透高達82%，而同波段下，其他TCO最高只能達到64%，對於利用到紅外光發電之太陽能電池相當有利。 A new transparent conducting oxide (TCO), Fluorine-doped ZnO (FZO) film has been deposited on the glass substrate using pulse DC magnetron sputtering with zinc target as well as Ar, H2, O2 and CF4 containing gas mixtures at room temperature. In the zinc oxide (ZnO:H) film, when the hydrogen ions formed shallow donors, the carrier concentration will be increased significantly. And the resistivity will be reduced. When introducing 1 sccm CF4 during the ZnO:H process, we can fabricate the FZO:H film with the lowest resistivity 8.2×10-4 Ω-cm; the better mobility 10.1 cm2/V-s; and the carrier concentrations 7.52×1020cm-3. Besides, their average transmittance in the visible region was over 82.7%. After the rapid thermal annealing (RTA) process, the carrier concentration of FZO:H film decreased from 8×1020cm-3 to 5×1019 cm-3. That is because the shallow donors, hydrogen ions, flowed away the FZO:H film. Besides, to compare the infrared spectrum (wavelength from 800nm to 1800nm), the average transmittance of FZO:H film is over 82% and the other TCO can only reach to 64%. All of the results show that we have found a cost effective and mass-production process suitable for the application of manufacture in the real-world industry. FZO:H can be used in the transparent window electrode of solar cell because of its good transmittance in infrared spectrum.
