本論文之主題，在於研究探討自我對準矽化鎳奈米電極的製作，以取代高摻雜的複晶矽電極。希望藉此改善奈米電極的串聯阻抗，尤其是操作溫度低於室溫時，所衍生阻抗過大的問題。因此如何控制鎳與複晶矽奈米線的回火條件以形成矽化鎳，以及鎳在奈米線下橫向擴散的機制，則是我們研究的重點。 本論文利用不同大小的複晶矽奈米線，與鎳經回火後形成矽化鎳。藉由調變回火時間（0 ~ 270 sec），來控制奈米尺寸下矽化的長度（630 ~ 1900 nm）。所製作的自我對準矽化鎳奈米線，在調變不同奈米線的幾何尺寸，利用電性量測來進一步的了解，矽化鎳奈米線所形成電極之阻抗。 The theme of this paper is to study self-aligned nickel silicide nanoelectrodes to replace the highly doped poly-Si electrodes. Hope to improve the nano- electrodes series resistance, especially when the operating temperature is below room temperature, derived from the problem of excessive resistance. Therefore, how to control the mechanism of lateral diffusion at nano-scale when annealing Ni with poly-Si to from NiSi is our research. In this thesis, we control the length ( 630 ~ 1900 nm ) of NiSi at nano-scale by modulating the annealing time ( 0 ~ 270 sec ) and making different sizes of poly-Si nano-wires to react with Ni while annealing NiSi. Making a self-aligned of electrode NiSi nano-wires and modulating different geometry of nano-wires can further the understanding of the electrode resistance that NiSi nano-wire forms by using the measurement.
