本論文主要在探討如何將氮化鋁鎵/氮化鎵蕭基二極體積體化整合於氮化銦鎵交流發光二極體晶片上。 我們嘗試兩種在垂直結構上整合蕭基二極體與發光二極體之方法: (1) AlGaN/GaN蕭基二極體結構再成長於InGaN/GaN發光二極體結構上，(2) InGaN/GaN發光二極體結構再成長於AlGaN/GaN蕭基二極體結構上。但因為兩種方法皆面臨到蝕刻精準不易控制的問題，因此我們改用了選擇性區域再成長之方法，製作交流發光二極體之整合元件。其中我們利用具有AlGaN/AlN多層堆疊緩衝層之AlGaN/GaN蕭基二極體元件，達成順偏電流20 mA時操作電壓為2.75 V，與逆偏-200 V時漏電流大小為75 μA等優良特性，並藉由黃光微影製程方式成功將AlGaN/GaN蕭基二極體與InGaN/GaN發光二極體元件積體化於同一交流發光二極體晶片上。而交流發光二極體之發光面積約為晶片面積的88.4 %，其蕭基二極體僅占整體交流發光二極體面積之3.3 %。與傳統僅由LED所組成之交流發光二極體的特性做比較，在同樣直流偏壓130 V下，新型結合蕭基二極體之交流發光二極體提升了整體發光面積約47 %，而發光強度提升約28 %。 In this study, we investigated the detailed mechanisms on fabricating InGaN-based Alternating Current Light-emitting diodes (AC-LEDs) with AlGaN/GaN Schottky Barrier Diodes (SBDs). We tried two methods for integrating vertical structures combined with SBDs and LEDs: (1) AlGaN/GaN SBD structure re-grown on InGaN/GaN LED structure, (2) InGaN/GaN LED structure re-grown on AlGaN/GaN SBD structure. Both of them had an accuracy problem of dry etching, so we developed a selective re-growth method to fabricate AC-LED incorporated with SBDs. In the SBD structure, we employed AlGaN/AlN multi-layers as the buffer layer to acquire the good device characteristics of an operation voltage of 2.75 V at 20 mA and a low leakage current of 75 μA at -200 V. Then we successfully demonstrated the integration of InGaN-based AC-LED chip with GaN SBDs by utilizing the photolithography process. The AC-LED has an emission area of about 88.4 % of the total chip area, while the integrated SBDs in a Wheatstone bridge (WB) scheme occupy only 3.3 % of the total chip area. Compare to the conventional WB AC-LEDs, the AC-LED integrated with SBD WB has a larger emission area by about 47 % and exhibit a higher integrated luminescence intensity by about 28 % at 130 V DC.
