銻化銦之能隙為0.17 eV，為一高載子遷移率材料。 過去多被用來製作紅外線偵測器以及霍爾感測器，近年來則因高速電子元件之應用而受到更多重視。然而，高速元件微縮的過程中，歐姆接觸具有低接觸電阻、平坦的金屬表面與是相當重要的，這將影響到元件的高頻特性、可靠度。 現今在三五族材料系統中的歐姆接觸，多使用如鈀、金、鉑諸如此類的貴重金屬，價格相當昂貴，不利於成本降低。在本篇論文中，吾人針對半導體工業中常用的低成本金屬如鎳、鉬、鎢、銅、鉻及鋁進行銻化銦歐姆接觸研究。我們發現鉬金屬在銻化銦上的特徵電阻值可達到與貴重金屬鈀/鉑/金相同的水準，並且同時具有良好的平坦表面，其表面粗糙度維持在2~3 nm的水準，此外本研究也針對熱穩定性進行分析，經過200 ℃，1 小時的環境下測試，仍然維持穩定的表面且低的特徵電阻值。本論文研發重點於未來使用低成本之金屬取代鈀、鉑和金的貴金屬，除降低生產線之成本外本文另行探討熱穩定性，使用AFM 表面分析、XPS與相位分析探討這些金屬對於銻化銦的影響。 In recent years, InSb have been intensively investigated for next generation low-power consumption logic integrated circuits due to its low band gap and high carrier mobility. Ohmic contact is important issue in device scaling. However, most metals for Ohmic contact on InSb such as Pd, Pd, Au are very expensive. It increases the mass production cost. In this study, we carry out a comparative study on the specific contact resistivity and surface morphology of low cost metals such as such as Mo, Ni, W, Cu, Cr and W on InSb. Mo contact get as low specific contact resistivity as the conventional Pd/Pt/Au contact. The value of specific contact resistivity of Mo contact on InSb is about 10-9 Ω-cm2. Besides, the Mo contact shows more flatten surface compare to Pd/Pt/Au contact after 300 ℃ thermal annealing. The surface roughness is around 2~3 nm. These results suggest that the Mo is a good Ohmic electrode for InSb base devices.
