Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49855

Title:	Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces
Authors:	Tseng,HW;Lu,CT;Hsiao,YH;Liao,PL;Chuang,YC;Chung,TY;Liu,CY
Contributors:	化學工程與材料工程學系
Keywords:	EUTECTIC SNPB;SOLDER JOINTS;DISSOLUTION;COPPER;CU
Date:	2010
Issue Date:	2012-03-27 16:24:46 (UTC+8)
Publisher:	國立中央大學
Abstract:	Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu(3)Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces. (C) 2010 Elsevier Ltd. All rights reserved.
Relation:	MICROELECTRONICS RELIABILITY
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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