A Numerical Study of Thermal and Electrical Effects in a Vertical LED Chip

NCU Institutional Repository > 工學院 > 機械工程學系 > 期刊論文 > Item 987654321/50035

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/50035

题名:	A Numerical Study of Thermal and Electrical Effects in a Vertical LED Chip
作者:	Hwu,FS;Chen,JC;Tu,SH;Sheu,GJ;Chen,HI;Sheud,JK
贡献者:	機械工程學系
日期:	2010
上传时间:	2012-03-27 17:01:47 (UTC+8)
出版者:	國立中央大學
摘要:	The influence of the size of an n-electrode and a current blocking layer (CBL) on the thermal and electrical characteristics of a vertical-injection GaN-based light emitting diode (LED) chip is investigated by numerical simulation. The predicted forward voltages are quite consistent with previous experimental data. The coupled thermal and electrical effects affect the performance of a LED chip. For cases without a CBL, the variation in current density and temperature distributions in the active layer, and the forward voltage and Joule heating percentage of the LED chip increase as the n-electrode width (L) decreases. The current crowding and temperature of the hot spot are very significant, although the wall-plug efficiency (WPE) is the highest one obtained for L = 100 mu m. The better width of the n-electrode in terms of the uniformity of temperature, current density distribution, WPE, and forward voltage may be the case where L = 200 mu m. The insertion of a CBL into a 600 x 600 mu m chip leads to greater uniformity in the distribution of the current density in the effective light-emitting area when L = 500 mu m. A more uniform temperature distribution in the active layer occurs when L = 200 mu m, while the case when L = 300 mu m has the maximum WPE. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3246784] All rights reserved.
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
显示于类别:	[機械工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	390	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....