Novel Semiconductors Based on Functionalized Benzo[d,d ']thieno[3,2-b;4,5-b ']dithiophenes and the Effects of Thin Film Growth Conditions on Organic Field Effect Transistor Performance

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/50757

Title:	Novel Semiconductors Based on Functionalized Benzo[d,d ']thieno[3,2-b;4,5-b ']dithiophenes and the Effects of Thin Film Growth Conditions on Organic Field Effect Transistor Performance
Authors:	Youn,J;Chen,MC;Liang,YJ;Huang,H;Ortiz,RP;Kim,C;Stern,C;Hu,TS;Chen,LH;Yan,JY;Facchetti,A;Marks,TJ
Contributors:	化學學系
Keywords:	CHARGE-TRANSPORT PARAMETERS;MOLECULAR PACKING;FUSED THIOPHENES;EFFECT MOBILITY;PENTACENE;DERIVATIVES;ELECTRONICS;POLYCRYSTALLINE;STABILITY;CONVENIENT
Date:	2010
Issue Date:	2012-03-27 18:09:37 (UTC+8)
Publisher:	國立中央大學
Abstract:	A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO(2) substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm(2) V(-1) s(-1) and I(on)/I(off) greater than 10(8).
Relation:	CHEMISTRY OF MATERIALS
Appears in Collections:	[Department of Chemistry] journal & Dissertation

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