Infrared interference coating by use of Si(3)N(4) and SiO(2) films with ion-assisted deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50948

Title:	Infrared interference coating by use of Si(3)N(4) and SiO(2) films with ion-assisted deposition
Authors:	Lee,CC;Ku,SL
Contributors:	光電科學研究所
Date:	2010
Issue Date:	2012-03-27 18:13:29 (UTC+8)
Publisher:	國立中央大學
Abstract:	Silicon nitride (Si(3)N(4)) and silicon dioxide (SiO(2)) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7 mu m. The application of Si(3)N(4) and SiO(2) films on the IR interference coating is demonstrated. (C) 2010 Optical Society of America
Relation:	APPLIED OPTICS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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