GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50977

Title:	GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template
Authors:	Chang,SJ;Wang,SM;Chang,PC;Kuo,CH;Young,SJ;Chen,TP
Contributors:	光電科學與工程學系
Keywords:	SCHOTTKY-BARRIER PHOTODETECTORS;LIGHT-EMITTING-DIODES;CAP LAYER;INGAN-GAN;BUFFER;FILMS
Date:	2010
Issue Date:	2012-03-27 18:14:24 (UTC+8)
Publisher:	國立中央大學
Abstract:	The authors report the fabrication of GaN-based metal-semiconductor-metal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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