Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF(4)/O(2) gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5 x 10(-3) in the range from 400 to 800 nm when the CF(4)/O(2) ratio was 0.375. The resistivity of fluorine-doped SnO(2) films (1.63 x 10(-3) Omega cm) deposited at 300 degrees C was 27.9 times smaller than that of undoped SnO(2) (4.55 x 10(-2) Omega cm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68 x 10(-4) Omega cm, which increased by less than 39% at a 450 degrees C annealing temperature for 1 h in air. (C) 2010 Optical Society of America
