Spectroscopic ellipsometric analysis of ZnSe(1-x)O(x) layers with different O compositions

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题名:	Spectroscopic ellipsometric analysis of ZnSe(1-x)O(x) layers with different O compositions
作者:	Uma,K;Chen,CY;Chao,CK;Wu,CH;Chyi,JI
贡献者:	電機工程學系
关键词:	OPTICAL-PROPERTIES;DIELECTRIC FUNCTION;ZNSE FILMS;TEMPERATURE-DEPENDENCE;ALLOYS;GAAS;CONSTANTS;GAP;ZNTE;REFLECTIVITY
日期:	2010
上传时间:	2012-03-28 10:12:45 (UTC+8)
出版者:	國立中央大學
摘要:	In this study, ZnSe(1-x)O(x) layers with oxygen contents of up to 7.0% are successfully grown at 300 degrees C on semi-insulating GaAs substrates by molecular beam epitaxy. The deposited ZnSe(1-x)O(x) films are characterized by Raman spectroscopy and the optical properties studied by spectroscopic ellipsometry. We examine the complex dielectric function obtained by spectroscopic ellipsometry in the photon range from 1.5 to 5 eV. The shifting and broadening of the critical points in the ZnSe(1-x)O(x) epilayers as a function of the O composition are investigated for the first time. The characteristics of the peaks change as the O composition increases. The second derivative of the dielectric function is presented and analyzed. The dielectric function spectra reveal distinct structures which can be attributed to the band gap and optical transitions at higher energy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3511439]
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[電機工程學系] 期刊論文

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