Catalyst-free ZnO nanowires grown on a-plane GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52722

Title:	Catalyst-free ZnO nanowires grown on a-plane GaN
Authors:	Chen,CW;Pan,CJ;Tsao,FC;Liu,YL;Kuo,CW;Kuo,CH;Chi,GC;Chen,PH;Lai,WC;Hsueh,TH;Tun,CJ;Chang,CY;Pearton,SJ;Ren,F
Contributors:	物理學系
Date:	2010
Issue Date:	2012-06-11 10:41:40 (UTC+8)
Publisher:	國立中央大學
Abstract:	ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)(ZnO)parallel to(110)(GaN). Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation. (C) 2009 Elsevier Ltd. All rights reserved.
Relation:	VACUUM
Appears in Collections:	[Department of Physics] journal & Dissertation

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