Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns

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题名:	Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns
作者:	Woon,WY;Chen,CL
贡献者:	物理學系
关键词:	MOSFETS;STRESS;SI
日期:	2010
上传时间:	2012-06-11 10:43:30 (UTC+8)
出版者:	國立中央大學
摘要:	We investigate two-dimensional boron transient diffusion in sub-micron scale patterns by plane view scanning capacitance microscopy (SCM). Submicron long strips and squares ion implantation windows of systematically varying sizes have been designed and fabricated. Boron ion implantation and spike annealing were followed to activate the dopant and cause diffusion. Square opening windows show more enhanced diffusion than the long strip counterparts, especially at larger length scales. We explain the observation and fit the experimental data by a nonlinear logistics model. The implication to modern microelectronic circuit design and conventional dopant profiling methodology are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492840]
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[物理學系] 期刊論文

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