Strain Relaxation during Formation of Ge Nanolens Stacks

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52846

Title:	Strain Relaxation during Formation of Ge Nanolens Stacks
Authors:	Chang,HT;Chen,WY;Hsu,TM;Shushpannikov,PS;Goldstein,RV;Lee,SW
Contributors:	物理學系
Date:	2010
Issue Date:	2012-06-11 10:47:01 (UTC+8)
Publisher:	國立中央大學
Abstract:	Self-aligned stacked Ge nanolenses were fabricated by selective chemical wet etching of Ge dot/Si multilayers. After removal of Si spacers, Ge nanodots become more lenticular. Based on the results of Raman spectroscopy, this shape change is attributed to the strain relief of Ge nanodots. The geometrical modulation could also be greatly beneficial to the vertical self-alignment of Ge nanolenses during the etching process. In addition, the improved full width at half-maximum value of the photoluminescence emission can be attributed to the reduction in size and composition fluctuations within the stacked Ge nanolenses.
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Appears in Collections:	[Department of Physics] journal & Dissertation

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