Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52895

Title:	Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers
Authors:	Sheu,JK;Tu,SJ;Lee,ML;Yeh,YH;Yang,CC;Huang,FW;Lai,WC;Chen,CW;Chi,GC
Contributors:	物理學系
Keywords:	ION-IMPLANTATION
Date:	2011
Issue Date:	2012-06-11 10:48:47 (UTC+8)
Publisher:	國立中央大學
Abstract:	GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Department of Physics] journal & Dissertation

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