Growth of graphene on 6H-SiC by molecular dynamics simulation

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52904

Title:	Growth of graphene on 6H-SiC by molecular dynamics simulation
Authors:	Jakse,N;Arifin,R;Lai,SK
Contributors:	物理學系
Date:	2011
Issue Date:	2012-06-11 10:49:04 (UTC+8)
Publisher:	國立中央大學
Abstract:	Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy.
Relation:	CONDENSED MATTER PHYSICS
Appears in Collections:	[Department of Physics] journal & Dissertation

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