High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

NCU Institutional Repository > 理學院 > 物理學系 > 期刊論文 > Item 987654321/52906

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/52906

题名:	High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature
作者:	Hung,SC;Chen,CW;Shieh,CY;Chi,GC;Fan,R;Pearton,SJ
贡献者:	物理學系
关键词:	GAS-SENSING PROPERTIES;THIN-FILMS;ZNO;TIN;MICROSTRUCTURE;PERFORMANCE
日期:	2011
上传时间:	2012-06-11 10:49:08 (UTC+8)
出版者:	國立中央大學
摘要:	AlGaN/GaN high electron mobility transistors (HEMTs) with zinc oxide (ZnO) nanowires modified gate exhibit significant changes in channel conductance upon expose to different concentration of carbon monoxide (CO) at room temperature. The ZnO nanowires, grown by chemical vapor deposition (CVD) with perfect crystal quality will attach CO molecules and release electrons, which will lead to a change in surface charge in the gate region of the HEMTs, inducing a higher positive charge on the AlGaN surface, and increasing the piezoinduced charge density in the HEMTs channel. These electrons create an image positive charge on the gate region for the required neutrality, thus increasing the drain current of the HEMTs. The HEMTs source-drain current was highly dependent on the CO concentration. The limit of detection achieved was 400 ppm in the open cavity with continuous gas flow using a 50 x 50 mu m(2) gate sensing area. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3596440]
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[物理學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	649	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing