English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 42718262      線上人數 : 1294
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/54171


    題名: 以濺鍍法製作矽異質接面太陽能電池之研究:矽薄膜特性對元件效率的影響;Research of High Efficiency Silicon Heterojunction Solar Cell Fabricated by Sputtering:Impact of Silicon Thin Film Properties on Device Performance
    作者: 王宣文;Wang,Hsuan-Wen
    貢獻者: 光電科學研究所
    關鍵詞: 異質接面太陽能電池;矽薄膜;磁控濺鍍;heterojuction solar cell;silicon thin film;magnetron sputtering
    日期: 2012-07-02
    上傳時間: 2012-09-11 18:38:48 (UTC+8)
    出版者: 國立中央大學
    摘要: 濺鍍為一種廣泛應用於薄膜成長,且具有許多優點的技術。然而對於矽薄膜的成長而言,濺鍍製程中的離子轟擊效應會使薄膜產生微孔洞,造成電性上的缺陷。因此濺鍍所製作的薄膜易形成矽氫多鍵結構與不易摻雜的特性。所以使用濺鍍法製作太陽能電池的難度較高,未能普及。本研究使用磁控濺鍍來成長含氫矽薄膜並應用此方法製作矽異質接面太陽能電池。研究發現對基板施加正偏壓下,可有效使矽氫多鍵轉變為矽氫單鍵之穩定型態,且可藉由調變濺鍍功率與氣壓等參數來提升薄膜的摻雜效率。此外再以提升摻雜的P型矽薄膜成長於N型矽晶片表面來製作異質接面太陽能電池。於選擇適當的薄膜製程條件下,可在平面型(未表面粗糙化)的矽晶片獲得10%轉換效率之異質接面太陽能電池。Sputtering is a popular technique with many advantages for thin film deposition. However, as for the preparation of hydrogenated silicon thin film, ion bombardment accompanies during sputtering may generate microstructures (voids, columnar structures) within the film, which leads to unfavorable silicon dihydride bodings and electrical defects. Therefore, hydrogenated silicon films fabricated by sputtering are hard to be doped. Those inferior properties made sputtering become non-popular in the fabrication of silicon thin film cells. In this research, we improved the qualities of hydrogenated silicon thin films and investigated electrical and optical properties with respect to deposition parameters. Our results indicated that applying positive bias voltage on the substrate provokes silicon monohydride formation, which is a rather stable bonding configuration as compared to silicon dihydride. Besides, the difficulties of doping can be reduced by refining fabrication parameters such as sputtering power and gas pressure. Futhermore, amorphous P-type / crystalline N-type silicon heterojunction solar cell using non-texture wafer surface has also been demonstrated. Proto-type solar cells with 1cm × 1cm area and 10% conversion efficiency were realized by choosing the appropriate sputtering parameters.
    顯示於類別:[光電科學研究所] 博碩士論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML1357檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明