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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/54563


    Title: 應用於生醫系統植入式晶片之N-MOSFET低壓降穩壓器(LDO)設計;Design of LDO (Low Drop-out Regulator) using N-channel MOSFET pass-element for Biomedical Implantation application
    Authors: 柯致專;Ke,Chuan-Chih
    Contributors: 電機工程研究所碩士在職專班
    Keywords: 生醫系統植入式晶片;低壓降穩壓器;Biomedical Implantation application;LDO
    Date: 2012-07-30
    Issue Date: 2012-09-11 18:54:07 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 近年來醫學科學與超大型積體電路的快速發展,使應用在人體內的植入式電子設備趨向於微小化,特別是針對高資料傳輸速率的植入式晶片,如人工視網膜輔具、人工電子耳、多通道微刺激系統等等,採用電感式耦合效應的無線方式來傳輸電源及控制晶片的訊號,可避免如線式傷口感染及電池式電源耗盡情形發生。因採用電感式耦合效應的無線方式來傳輸電源及資料,因此傳輸電源含有載頻2MHz的交流訊號,經由全波整流器做交-直流轉換後,再利用低壓降線性穩壓器 (Low Drop-out Regulator, LDO) 達成降低電源雜訊影響之功效。此篇論文採用N-Channel MOSFET做為LDO的傳輸元件(Pass element)且產生輸出10mA負載的3.3V及1.8V的低壓降雙穩壓系統,分別給予電極驅動單元及其他植入式電路。此雙穩壓系統採用TSMC 0.18um Mixed Mode process實現。The medical science and VLSI are being developed rapidly in recent years. Application of implantable electronic devices in the human body trends to miniaturization, especially for high data transfer rate of the implanted chip, such as multi-channel micro-stimulation retinal prostheses and cochlear systems. Using wireless way with inductive coupling to transmit the signal of the power supply and control chip can prevent the situation such as the wound infection of wire-type power supply and exhausted of Battery-type power supply. Owing to the use of inductive coupling of the wireless way to transmit power and data, the power contains the AC signal of carrier frequency of 2MHz. Through the full-wave rectifier, AC - DC converter, and then the low dropout linear regulator (Low Drop-out Regulator, LDO), one can reduce the power supply ripple significantly.. This thesis focuses on the design of dual low-dropout regulators using N-channel MOSFET. It provides regulated 1.8V and 3.3V with output loading of 10mA. The regulators are used for supplying the electrode driver and other implantable circuits. This dual-regulator system was verified in TSMC 0.18-um Mixed-mode process.
    Appears in Collections:[Executive Master of Electrical Engineering] Electronic Thesis & Dissertation

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