以反應性射頻磁控濺鍍搭配HMDSO電漿聚合鍍製氧化矽摻碳薄膜阻障層之研究;Investigation of SiOx:C barrier films deposited by RF reactive magnetron sputtering coupled with HMDSO/O2 plasma polymerization

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題名:	以反應性射頻磁控濺鍍搭配HMDSO電漿聚合鍍製氧化矽摻碳薄膜阻障層之研究;Investigation of SiOx:C barrier films deposited by RF reactive magnetron sputtering coupled with HMDSO/O2 plasma polymerization
作者:	魏敬倫;Wei,Chin-Lun
貢獻者:	光電科學與工程學系
關鍵詞:	射頻磁控濺鍍;電漿聚合;HMDSO;薄膜阻障層;氧化矽;軟性電子;Barrier films;Flexible electronics;HMDSO;Plasma Polymerization;Reactive magnetron sputtering;Silicon oxide
日期:	2012-10-04
上傳時間:	2012-11-12 14:29:55 (UTC+8)
出版者:	國立中央大學
摘要:	軟性電子產業於近期內崛起，其輕薄、可撓可攜、大面積之優點使其被廣泛應用於顯示器、照明、能源及生醫等領域中，並在未來十年內大幅改變人類生活型態。然而，當有機軟性元件被製作於塑膠基板上，許多材料及製程上的挑戰臨到。其中，有機半導體對水氣、氧氣十分敏感，其電性受氣體影響而迅速衰退，此乃可撓式有機發光二極體難以順利發展的原因之一。為提升有機元件壽命，製備極低水氣穿透率(WVTR)(<10^-6 g/m^2/day)及柔軟性佳之薄膜阻障層為首要之務。本研究使用射頻磁控濺鍍搭配有機單體HMDSO於PET基板上沉積氧化矽摻碳薄膜阻障層。磁控濺鍍槍、矽靶材及通入之氬氣、氧氣在210^-2 torr腔體壓力下以高密度電漿進行濺鍍，同時打斷HMDSO單體鍵結，與其共同反應聚合沉積高緻密性薄膜。一般HMDSO電漿聚合製程中，薄膜內籠狀矽氧結構多於線狀矽氧結構；而本鍍膜系統中，矽靶逸出之矽原子少數與氧結合，多數與碳結合，形成較多線狀結構，因而沉積出孔洞性少且化學性質接近聚合物之薄膜。實驗以100W射頻能量、10sccm氧氣、30sccm氬氣及4sccm HMDSO成功鍍製一緻密性高、孔洞性低、光穿透率高於90%、膜厚50nm的薄膜阻障層，其水氣穿透率可達7.610^-2 g/m^2/day，約為目前以HMDSO製備氧化矽單層膜之WVTR最佳值0.3 g/m^2/day 的1/4。相信未來可用此有機無機材料混合方式沉積氧化矽多層膜，並符合有機元件阻水及可撓需求，以應用於OLED封裝產業。The recent rise of flexible electronics industry aiming to deliver lightweight, flexible, portable and large-area products has been extensively applied in the fields of display, lighting and biomedical engineering and will be the next-generation lifestyle-changing electronic devices. However, many material and process-related challenges appear when flexible organic components are fabricated on polymer substrate. Among the challenges, moisture permeation could degrade and reduce the performance and durability of organic flexible organic light-emitting diode (OLED), making it difficult to be developed. In order to achieve OELD’s lifetime of thousands of hours, water vapor transmittance rate (WVTR) must be below <10^-6 g/m^2/day. In this study, magnetron sputtering and hexamethyldisiloxane (HMDSO) were used to deposit SiO2:C barrier film on PET substrate. In high-density plasma produced by magnetron sputtering gun, oxygen, silicon atoms and fragmented HMDSO were mixed together under 210^-3 torr to deposit dense films. During PECVD process, there were more cage silicon-oxide structures than linear silicon-oxide structures. By contraries, in our system, most escaping silicon atoms from target connected with carbon atoms instead of oxygen atoms, resulting in a polymer-like film with large amount of linear structure. 100 W RF power, 10sccm O2, 30sccm Ar and 4 sccm HMDSO were applied to deposit a 50-nm-thick film with low porosity and high transmittance above 90%. WVTR of the film reached the value of 7.610^-2 g/m^2/day, which is 4 times lower than the best WVTR value, 0.3 g/m^2/day, of films deposited by PECVD-HMDSO system. It is believed that by combining organic and inorganic process, multilayer could meet OLED barrier requirement and will be used in OLED encapsulation industry in future.
顯示於類別:	[光電科學研究所] 博碩士論文

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