透明導電膜功函數對矽異質接面太陽能電池之影響; Effect of Transparent Conductive Oxide Work Function on Silicon Heterojunction Solar Cell

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题名:	透明導電膜功函數對矽異質接面太陽能電池之影響;Effect of Transparent Conductive Oxide Work Function on Silicon Heterojunction Solar Cell
作者:	周世欽;Zhou,Shi-Qin
贡献者:	光電科學與工程學系
关键词:	功函數;異質接面太陽能電池;氧化銦錫;work function;ITO;heterojunction solar cell
日期:	2013-08-30
上传时间:	2013-10-08 15:13:08 (UTC+8)
出版者:	國立中央大學
摘要:	本實驗分為兩大方向來討論，其一是透明導電膜ITO單層膜的分析，第二是ITO應用於矽異質接面太陽能電池探討。ITO單層膜主要分兩大主軸，優化光電特性以及提高功函數；優化光電特性部分，我們利用改變製程功率以及溫度，得到ITO最佳的電阻率為1.21x10-4 (Ω-cm)，在波長400~1100 nm下最佳的平均穿透率為82.97%；也利用不同製程環境得到功函數4.36~5.20 eV的分佈範圍。電池元件討論部分將ITO分為兩層鍍製，和P層接觸的下層ITO，討論功函數對電池的影響；上層ITO為傳導層，具備良好的光電特性。根據本實驗結果，當功函數越高，電池的開路電壓明顯提高，元件效率也提升。當ITO功函數為4.36 eV，光電轉換效率為3.8%；若將功函數提升為5.20 eV可得最佳轉換效率8.3%。 The experiment discussed in two parts, one of which was analysis single layer of transparent conductive oxide ITO, and the other was discussion ITO applied in heterojunction solar cells. In the research, we optimized ITO electrical and optical properties with sputtering different deposition parameters. In our study, the lowest value of resistivity was 1.21x10-4 (Ω-cm) and the best average optical transmittance was 82.97% in the range of 400~1100 nm. Besides, we can control ITO work function range from 4.36 eV to 5.20 eV. In this study, we deposited two layers different properties ITO thin films on silicon heterojuction solar cell. ITO film that contacted with amorphous P-type silicon was used to discuss the relation between work function and cell efficiency. The upper ITO was conductive layer, and it has excellent electrical and optical properties. According to the results, the efficiency and open circuit voltage of cells were better when sputtering ITO with higher work function. ITO films with work function 4.36 eV, the photoelectric conversion efficiency was 3.8%. The best conversion efficiency was 8.3 % with highest ITO work function 5.20 eV.
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