對於太陽電池而言，擁有良好的抗反射塗層，可以減少光損耗，進而提高了光電轉換效率。 氫化氮化矽層(SiNx：H）是使用最廣泛的矽晶體太陽能電池的單層抗反射膜（ARCS）。然而單層抗反射膜，只能在特定波長下獲得某個波段的最低反射率。為了進一步擴大抗反射波段，減少入射光在太陽能電池反射而損失，在許多研究紛紛提出由兩種以上不同的材料（如MgF2/CeO2，SiO2/TiO2和SiO2/SiNx）[1-3]的雙堆疊結構的抗反射層，相較於單層膜的僅單一波長抗反射，其擁比較寬的波長範圍內的抗反射效果。 在這項研究中，我們提出了一個新的抗反射結構，利用電子迴旋共振化學氣相沉積（ECRCVD）系統沉積SiOxNy:H/ SiCxNy:H的多層結構。藉由調整SiH4、CO2，CH4和N2等氣體的流量比，沉積SiOxNy:H和SiCxNy：H薄膜。經光譜橢偏儀測量的結果，調整不同流量比之SiOxNy:H和SiCxNy的折射率，可被調整在1.46?2.05和2.06?2.96 （633 nm）之範圍。 利用每一層薄膜的光學參數設計不同堆疊之抗反射層，並模擬SiOxNy:H/ SiCxNy:H多層結構的反射率、穿透率，經由模擬軟體優化厚度，最佳化之抗反射膜將藉由ECRCVD沉積於矽基板上，經UV-VIS分光光譜儀測量反射率，並和模擬結果進行比較。在單晶矽上反射率可降低至4.12%，而多晶矽上的抗反射率，可降到1.93%。並試圖將抗反射膜應用於多晶矽太陽能電池上，觀看其在電池上之表現。 It is well-known that a good antireflective coating, which could reduce the photocurrent loss and enhance the photoelectric conversion efficiency, is important for solar cells. Hydrogenated silicon nitride layers (SiNx:H) are most widely used for crystalline silicon solar cells as single-layer antireflection coatings (ARCs). However, low reflectance could only be obtained from a single-layer ARC at a specific wavelength. In order to further minimize the front reflection of solar cells, double-layer ARCs consisting of two different materials (such as MgF2/CeO2, SiO2/TiO2 and SiO2/SiN) have been developed due to their low reflectance at a relatively wide wavelength range In this study, we propose a new ARC structure of SiOxNy:H/SiCxNy:H multilayer films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) system. By adjusting the precursor gas flow ratios of SiH4、CO2、CH4 and N2, the composition of the SiOxNy:H and SiCxNy:H thin films could be adjusted. From our preliminary results, the refractive indexes of the SiOxNy:H and SiCxNy:H films measured by the spectroscopic ellipsometer are in a range of 1.46~2.05 and 2.06~2.96 (at 633 nm), respectively. These data will be used for the reflectance simulation to evaluate the performance of SiOxNy:H/SiCxNy:H multilayer structures and obtain the theoretically optimized thickness and optical parameters of each layer, which could be used as references for tuning the growth recipes of multi-layer SiOxNy:H/SiCxNy:H ARCs. After depositing the multi-layer ARCs on Si wafers, the reflectance will be measured by UV-VIS spectrophotometer and compared with the simulation results.
