異??并苯衍生物合成與性質之研究; Syntheses and property studies of isotruxene derivatives

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题名:	異??并苯衍生物合成與性質之研究;Syntheses and property studies of isotruxene derivatives
作者:	呂明鍾;Ming-Chung Lui
贡献者:	化學研究所
关键词:	異参茚并苯;isotruxene
日期:	2006-06-19
上传时间:	2009-09-22 10:14:51 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	在本論文中，我們探討兩個異参茚并苯衍生物ITF05與ITF06的物理性質及電致發光的特性。本實驗室先前曾研究化合物ITF05的物理性質，相較於文獻中有關参茚并苯及其衍生物的報導，ITF05在溶液中具有發藍色螢光性質（427 nm , 450 nm）、高螢光量子產率（ΦPL = 65%），及良好的熱化學性質（Tg = 160℃ , Td = 415℃）與電化學氧化還原可逆性。由於在薄膜中螢光圖譜有寬化的現象，因此我們設計出ITF06分子，想要減少薄膜中分子聚集的現象。實驗數據顯示ITF06有更高的螢光量子產率（ΦPL = 95%）及更佳的熱穩定性（Tg = 246℃ , Td = 447℃）。利用ITF05與ITF06所製作的元件ITO / PEDOT：PSS / ITF05或ITF06 / TPBI / Al；在操作電壓為8伏特下，ITF05和ITF06的CIE色座標分別為（0.23 , 0.34）和（0.20 , 0.20）。不過在較高電壓下，卻都會發生氧化降解的現象，影響了放光效率及色純度，我們透過紅外光光譜推斷結構可能產生了氧化降解現象。然而ITF05和ITF06無法利用蒸鍍法製作薄膜，必須找尋更高真空度的儀器設備，再作元件效率的探討。 In this thesis , we report the physical and electro-luminescence properties of two isotruxene derivatives , ITF05 and ITF06. Our laboratory had previously investigated the physical properties of compound ITF05. When compared with the literature data for the corresponding truxene derivatives, ITF05 in solution has superior properties in terms of fluorescence position（427 nm, 450 nm）, the quantum yield of fluorescence （ΦPL = 65 %）, thermostability（Tg = 160℃, Td = 415℃）, and electrochemical stability. The fluorescent spectra of ITF05 in thin solid films are broadened, which could be due to formation of aggregates. We thus designed molecule ITF06 , in order to reduce the aggregation behavior in thin films. ITF06 has a higher fluorescent quantum yield （ΦPL = 95%） and better thermostability （Tg = 246℃, Td = 447℃）than ITF05. The EL properties of ITF05 and ITF06 in the devices with the composition of ITO / PEDOT : PSS / ITF05 or ITF06 / TPBI / Al ; the CIE coordinate for ITF05 and ITF06 are （0.23 , 0.33） and （0.19 , 0.20） respectively, when the operating voltage is 8V. Nevertheless, both ITF05 and ITF06 degradated at a higher voltages , which reduce their efficiency and color-purity. According to the IR spectra , the degradatation could be the formation of keto-defects. It should be noted that the high molecular weights of ITF05 and ITF06 prevent from using the method of vacuum deposition for device manufacturing. Superhigh vacuume systems might reduce this problem.
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