本實驗是以高純度鋁片(99.99%)在草酸溶液中進行陽極處理來製作氧化鋁奈米孔洞，探討陽極處理的外加電壓對孔洞直徑、孔洞的間距與氧化鋁厚度的影響。 並藉由陽極處理的過程中電壓的改變，使氧化鋁孔道大小與孔道的間距重新調整，當電壓改變成2倍時，孔道與孔道的間距會因此變大，並且有些孔道會停止生長，而當電壓改變成 倍時，孔道與孔洞的間距會變小，造成孔道的分裂，另外在相同的電壓進行陽極處理，孔洞間的距離不會改變，利用此特性以氫氧化鈉先將孔道擴大，再進行陽極處理，使孔道兩端形成產生不同大小的孔徑。用電壓變大或變小的關係以及擴孔的方式來互相轉換，使得氧化鋁孔道產生不同的圖案。 另外再以陽極處理所形成的氧化鋁作為模板，使用電化學沉積法將鉍元素填入氧化鋁模板內，製備奈米線陣列。 In our experiment, alumina nanopores were prepared in oxalic acid with high purity (99.99％) aluminum foils by anodization method. In the anodization process, we discuss the influence of the pore diameter, interpore distance, and the thickness of alumina upon the anodization voltage. The size of alumina channel and interchannel distance were rearranged by changing the voltage during anodization. When the anodization voltage convert to 2- fold, the size of alumina channel and interchannel distance will increase. And when the voltage change to -fold, the channel size and interchannel distance will decrease. Meanwhile, it will lead to cleavage of the channel. The interchannel distance will not change in the same anodization voltage. Accordingly, sodium hydroxide were used for pore-widening before anodization. This process will result in different diameters of the pores at two sides of the channel. Finally, we switch the potential increase/ decrease and pore-widening step to produce alumina channels with different morphologies. In another way, we use the anodized alumina as a template to prepare bismuth nanowire array by electrochemical deposition.
