討論以不同氫注入離子源設備注入氫離子，並依需求設計不同之晶圓結構，同時引入微波強化於製程中，以較佳條件下提供SOI製作方式。 採用傳統離佈植機作為氫注入離子源，並於結構中引入多晶矽犧牲層，有效降低氫離子佈植到矽材料層的深度以減低轉移薄膜厚度，亦可阻擋共佈植污染與電漿及重離子對表面的轟擊損傷，同時在薄膜轉移過程可減少佈植時的穿隧效應，使薄膜轉移後之表面粗糙度Rrms從Smart Cut的8~12nm縮小到4~6nm。薄膜轉移後，採用稀釋氫氟酸與雙氧水之混合蝕刻液，透過大於10倍以上的蝕刻選擇比，可將蝕刻終點有效控制在單晶矽層位置，並使表面Rrms下降至1.5~3nm。 以雲式離子佈植機為氫注入離子源，並配合多晶矽犧牲層作為雜質阻擋與捕捉層，能以高產率製作100nm左右之超薄SOI晶圓，以加熱方式進行薄膜轉移後之矽薄膜表面沒有損傷層產生，可減少後續CMP製程之減薄成本與良率損失。 應用微波強化晶圓鍵合時，能在10分鐘與300℃以下增強不同界面之矽與二氧化矽組合，其中矽/二氧化矽界面之晶圓對的鍵合力為其餘組合的兩倍，達2000~2600mJ/m2，並可承受薄膜轉移的狀態。微波配合應用於雲式離子佈植機作為氫注入離子源之薄膜轉移之強化時，亦可在400℃以下與1小時內下達成薄膜轉移效果。 Different hydrogen injection plasma sources and microwave have been utilized in the nano-scale layer transfer process. Based on the characteristics of the device, special designed structure has been proposed in the research. To apply the traditional Ion Implanter as the hydrogen injection apparatus, a sacrificial poly-silicon layer is induced to reduce the thickness of the SOI. The poly-silicon sacrificial layer retards the co-implanted contamination and the ion bombed of the desired wafer surface. It also decreases the tunneling effect during implantation and leads to the smoother SOI surface by Rrms from 8~12nm to 4~6nm. A mixing etchant of diluted HF and H2O2 follows to exhibit more than 10 times in etching selectivity to reduce the SOI surface by Rrms in 1.5~3nm. A modified Ion Shower Implanter of the G4 TFT-LCD is also utilized as the hydrogen injection source. A poly-silicon sacrificial layer is applied in retarding the contamination and the co-implantation. Ten pieces of wafer can be processed in one hour to fabricate 100nm ultra-thin SOI. There is no damaged layer on the transferred surface after thermal layer splitting process. It can reduce the thinning cost and the yield loss during following CMP process. The microwave is induced to enhance the nano-scale layer transfer processing. The bonding strength of Si/Si, Si/SiO2, SiO2/SiO2 pairs bonded through oxygen plasma surface activation can be rapidly increased to the stable level in 10min. The bonding strength of Si/SiO2 pair is twice to others and in the level of 2000~2600mJ/m2 for suffering the layer transfer process. As the hydrogen is induced by Ion Shower Implanter, the layer transfer processing can be finished below 400℃ and within 1hour by microwave enhancement.
