本篇論文主要的研究重點在於合成出DMADT、DFPADT、DFPEADT三種新的有機半導體材料。DMADT為P型半導體，是將雙噻吩蒽（anthradithiophene , ADT）的兩邊接上甲基，其載子移動率達到0.012 cm2/Vs，開關電流比約為104。DFPADT預期為N型半導體，是將ADT兩旁之取代基改為具有拉電子性質的全氟苯環，其載子移動率達到0.048 cm2/Vs，開關電流比約為106，但N型半導體的性質不明顯。DFPPEADT是將苯乙炔基接在DFPADT中間的苯環上所得之可溶性半導體材料，近期將製成元件以得知其導電的效能。 元件製作的部分，由西北大學Tobin J. Marks實驗室協助製作，DMADT、DFPADT需由真空蒸鍍的方法來製作元件，DFPPEADT則期望可以使用溶劑製程。目前這三種新材料的元件製備條件仍在嘗試階段，希望能找出最適合的製程條件，以利未來對此類分子的材料做更多的結構改良，以期提昇其載子移動率並製作出元件效能更佳的有機薄膜電晶體。 The main purpose of this thesis is to synthesize three new organic semiconductor materials – DMADT, DFPADT and DFPPEADT. DMADT is a p-type semiconductor and was modified from anthradithiophene (ADT) via methylation on the thiophene ring. The mobility of DMADT is about 0.012 cm2/Vs and on/off ratio ~ 104. DFPADT, with perfluorophenyl group connection to the thiophene of ADT; a potential N-type semiconductor, currently reveals higher mobility ~0.048 and 106 on/off ratio. DFPPEADT, the soluble OTFT, was functionalized DFPADT with two phenylacetylenyl groups, which device is in progress. The device fabrication is currently assisted by Tobin J. Marks group at Northwestern University. DMADT and DFPADT were prepared via vacuum deposition and DFPPEADT will be examined via the solution process. The optimum condition of the device fabrication for these three new materials is currently in process. Hopefully, new OTFT materials with better mobilities and easier fabrication will be obtained in the future.
