本論文主要分為兩個部分，第一部分是以化學水浴法鍍製硫化鎘量子點薄膜，我們以製程時間3分鐘以及氨水濃度1.2 M等參數，分別進行膜層內量子點大小分佈及薄膜結晶性的優化，再以後退火參數300°C―30分鐘處理，最後可以得到晶相單純及粒徑約2.5 nm的CdS量子點。第二部分是量子點窄帶濾光片的鍍製，我們以旋轉塗佈法及離子束濺鍍法成功鍍出pair number = 3、4、5的量子點窄帶濾光片，同時也量測到窄帶濾光片在雷射功率為11.2 mW激發下，中心波長穿透率因為量子點的增益分別提升為152.2 %、418.3 %及534.0 %。最後我們以本研究所寫的模擬程式，擬合在不同雷射功率下每一片窄帶濾光片中心波長之穿透率，並進一步算出spacer的等效消光係數k。; The thesis is consisted of two parts, the first part is about fabrication of CdS quantum dots by chemical bath deposition (CBD), in which we improve the size distribution of quantum dots, QDs, uniformity of crystalline phase. The optimized parameters are 3 minutes process time, 1.2 M ammonia, and 300˚C post-annealing with 30 minutes which results in the quantum dots of 2.5 nm with high performance of crystallization. The second part is about the fabrication of narrow band pass filter, NBPF, with spacers including quantum dots. We successfully fabricate QDs-NBPF with the 3, 4, 5 pair number by Ion-Beam Sputtering Deposition and spin coating. And then with the 325 nm He-Cd laser pumping, the transmission of QDs-NBPF with 3 pairs, 4 pairs and 5 pairs at the center wavelength are 152.2 %, 418.3 % and 534.0 %, respectively. Finally we calculate the equivalent extinction coefficient k of the spacer of the QDs-NBPF by fitting the transmission intensity on the center wavelength.
