以磁控電漿輔助化學氣相沉積法製鍍有機矽阻障層之研究; Investigation the organo-silicon barrier film deposited by magnetron PECVD

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题名:	以磁控電漿輔助化學氣相沉積法製鍍有機矽阻障層之研究;Investigation the organo-silicon barrier film deposited by magnetron PECVD
作者:	黃聖傑;Huang,Sheng-Chieh
贡献者:	光電科學與工程學系
关键词:	薄膜阻障層;水氣穿透率;barrier film;HMDSO;WVTR
日期:	2014-01-27
上传时间:	2014-04-02 15:24:16 (UTC+8)
出版者:	國立中央大學
摘要:	隨著科技的快速發展，消費型電子產品逐漸成為人們生活不可或缺的一部分，然而建立在矽基板、玻璃纖維及玻璃基板的電子產品已難以實現輕、薄、低成本的開發目標，於是使用輕薄、可撓曲、低成本塑膠基板的軟性電子技術遂成為製造商眼中理想的開發標的。儘管塑膠基板具有質輕、耐撞擊及快速量產等優點，但其對水氣滲透的隔絕性不佳使得水氣阻障薄膜成為近來熱門的研究方向。其中氧化矽薄膜由於具有良好的透光性及機械性質而成為良好的水氣阻障材料，但一般如電容耦合式電漿輔助化學氣相沉積(PECVD)方式製鍍氧化矽薄膜多操作於10-1 Torr之低真空環境，使其難以搭配磁控濺鍍於高真空環境(10-3 Torr)下進行連續作業。磁控電漿輔助化學氣相沉積法(magnetron PECVD)以磁控濺鍍槍作為電漿源而使PECVD能操作於高真空環境(10-3 Torr)，薄膜沉積時原子較不易與其他原子碰撞而能在氣相中維持高動能，並於薄膜沉積時移動至鍵結位能低點而得到較緻密之膜材。但以此方法鍍製時有機矽存留在電漿時間較短，使膜材內含大量碳氫不純物降低薄膜阻水氣效力。本實驗以磁控電漿輔助化學氣相沉積法於高真空環境下製鍍氧化矽薄膜阻障層，在電漿功率100W、10sccm氧氣及0.25g/h HMDSO，製鍍50nm厚之薄膜阻障層，其水氣穿透率在微量含碳下仍可達 0.139g/m2/day，相信能符合軟性光電元件對阻水氣性及可撓性上的需求。; With the rapid development of technology, consumer electronics products gradually become an indispensable part of people's lives. However, electronics based on the silicon substrate, glass fiber and glass substrates has been difficult to achieve light, thin and low-cost development goals, so the use of thin, flexible, low-cost flexible plastic substrate becomes an ideal develop targets for manufactures. Although the plastic substrate has the advantages such as light-weight, impact-resistant and rapid mass production, but its poor water vapor permeation barrier ability limit its application, therefore promote water vapor barrier film becomes a popular research topics. Silicon oxide film has good transparency and mechanical properties makes it a popular water vapor barrier material, but generally PECVD silicon oxide film coating process such as capacitive coupled PECVD operates at low vacuum environment (10-1 Torr), makes it difficult to match magnetron sputtering process under high vacuum enviroment (10-3 Torr) for continuous operation. Magnetron PECVD using magnetron sputtering gun as PECVD plasma source which makes PECVD process can operate in high vacuum environment (10-3 Torr), however silicon oxide coating by this method may leads to a large number of hydrocarbon content in layer, since the short residence time of monomer in plasma result to a lower degree of monomer fragmentation, thus reduce the effectiveness of the permeation barrier ability of silicon oxide film. In this research, silicon oxide water vapor barrier film on PET substrate deposited by magnetron PECVD in high vacuum environment (10-3 Torr). Although the side effect such as hydrocarbon content and high process temperature by magnetron sputter gun may deteriorate the barrier performance of the silicon oxide film, the improvement of vacuum degree may able to improve the compactness thus lower the WVTR value. Excess oxygen flow can further increase the Si(-O)4 content, but the etching effect by oxygen plasma on PET substrate may destroy the surface flatness then increase possibility of nano-crack by release of internal stress. 100W RF power, 10sccm O2, 0.25g/h HMDSO were applied to deposit a 50-nm-thick film with low WVTR and high transmittance above 90%. WVTR of the film reached the value of 0.139 g/m2/day lower than the best WVTR value, 0.3 g/m2/day, of films deposited by HMDSO using PEVCD process with other plasma source.
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