綜合以上種種限制條件，本論文題出了三維結構的構思：我們利用陽極氧化鋁法製作了二維的奈米孔洞膜板後，結合自我複製式成膜技術設計並完成了三維MIM表面電漿元件。根據量測結果，除了成功觀察到表面電漿的吸收光譜可在可見光波段的高頻區外，此結構也成功突破特定角度、特定偏振的限制；相比於稜鏡耦合法的平板MIM元件，此研究成果大大縮小了整體元件大小；而且在光電轉換的效率上，相比與結構式的二維MIM元件更超過了一個數量級。其中，我們更發現此三維MIM表面電漿結構對應不同的入射光波長時可產生不同強度光電流的特殊現象。 ;There are several techniques can transit solar energy as electrical energy, such as solar cell, photodiode or rectenna. Based on the surface plasmonic effect and the hot carrier transportation, the metal-insulator-metal device (MIM) was employed to convert the solar spectrum from the ranges of visible light to infrared region in this study. In this research, the MIM device was fabricated on an anodic aluminum oxide (AAO) template. The uniform pore size and period of the AAO can be achieved by using the multi-electrolyte-step process. The auto-cloning technique was applied to achieve the three-dimensional MIM. Besides, the Finite Difference Time Domain (FDTD) method was used to simulate the properties the three-dimensional device and realize its plasmonic effect.
Finally, the power conversion efficiency (PCE) 1.34E-03 % of the three-dimensional MIM was achieved under an AM 1.5 solar simulator. And we find the photocurrent of the MIM device is corresponding to the wavelength of the incident light.
