有機發光二極體OLED具有自發光性、廣視角、高對比、低耗電、高反應速率、全彩化、製程簡單等優點，而熱蒸鍍為OLED製程中最重要的技術，依其蒸發源又分為點蒸鍍、線蒸鍍以及面蒸鍍，前二者由於材料成本耗費太大，近年來又以面蒸發源共蒸鍍技術為各大廠商研發之重點。本論文目的在於設計面型共蒸鍍驗證平台，以下有5點指標為本論文研究之目標：(1).面型蒸鍍加熱器面積325×435mm2 (2).操作溫度：500℃ (3).穩態溫度均勻度< 1% (在真空下1×10-5torr) (4).加熱時間600秒，溫度均勻度< 3%升溫速率>100℃/min (5).流場均勻性< 3%，以ANSYS有限元素法及Fluent流體計算力學模擬大面積蒸鍍加熱源之材質與紅外線燈管之陣列組合，研究快速升溫下面型蒸鍍加熱器的特性，並設計反射板，分析其對溫度均勻性以及升溫速率的影響，最後探討腔體內部流場分布情形，分析加熱器設計對於流場均勻性的影響，並設計不同的擋板，觀察其對流場的影響，期許能提昇面型蒸鍍之蒸鍍效率，並使研究成果作為R2R蒸鍍技術發展之基礎。;Since the surface evaporation technique is less cost compared to the point evaporation and the line evaporation technique, it is focused by the research and development from major OLED manufacturers recently. There are five major points to study: (1).The planar heater size is 325×435mm2 (2).The operating temperature is 500℃ (3).The temperature uniformity at steady state < 1% (the operating pressure is 3~6х10-5torr) (4). At heating time 600s, the temperature uniformity < 3% and heating rate >100℃/min (5). The flow field uniformity < 3%. In this research, we use the finite element analysis software, ANSYS and computational fluid dynamics, Fluent, to simulate the arrangement of the large-area evaporation deposition heating source in infrared lamp. Besides, we also design the reflector to get more uniform temperature on susceptor. At the end, we study the flow field to find out how the stream influence the deposition on glass substrate. These studies will be the base lines for the R2R (run to run) evaporation technology in the future.
