有機金屬化學氣相沉積法（Metal–Organic Chemical Vapor Deposition, MOCVD）為目前製作LED最重要的技術之一，藉由通入有機金屬源與V族氣體於真空的反應腔體，反應源於高溫的旋轉載台上反應成膜，其中進氣系統與反應腔體的設計將影響成膜均勻性與成長速率。本研究採用ANSYS Fluent進行模擬分析，探討現有Veeco垂直進氣式與Aixtron行星式反應腔體之熱流場現象，並於Aixtron自旋長率的部分提出以預測的方式計算，大量縮短運算的時間與效能需求，預測所得結果與文獻結果非常吻合。本論文探討熱輻射對於Veeco腔體的影響，得知熱輻射為MOCVD腔體中主要的熱傳方式之ㄧ，而熱傳的大小將影響長率的結果。Aixtron腔體部分，先進行參數探討，了解各操作參數下腔體之熱流場行為，之後再藉由設計檔板與垂直噴流於常壓環境，此創新進氣系統設計能使腔體在常壓下進行製程，且不需自旋即可達到好的成膜均勻性與成長速率。;Metal–Organic Chemical Vapor Deposition, MOCVD, is one of the most important technologies to manufacture the LED. By introducing MO source and group V gas into the reactor, then deposits the thin film on the high temperature susceptor. The key components, a gas injection system and the reactor design, play a crucial role in the epitaxial growth rate and uniformity of thin film. In this study, we report a new method to predict the growth rate for Aixtron reactor. The prediction growth rate is in agreement with the previous reported result. In this paper, we also found that the radiation effect has a significant on the growth rate. Finally, we do the parameter analysis to realize the chamber characteristic for Aixtron reactor. Then, we design a new injection system that combines the barrier and purge design to enhance the growth rate and improve the uniformity without wafer spin. Additionally, the new design of MOCVD reactor could be used to epitaxy thin film at atmospheric pressure.
