隨著高速通訊快速的發展，光傳輸是許多團隊研究的重點，本論文所呈獻之成果為高品質鍺製作成的光偵測器和特性量測，及其在光通訊上的應用潛力。我們利用SOI wafer蝕刻出許多矽長條型結構後，由國家奈米元件中心(NDL)進行離子佈值分別以BF2、As摻雜成為P型以及N型相間的陣列，在P型和N型矽上方鍍上一層鍺膜，再將試片在爐管中進行超過鍺熔點溫度的快速熱退火後，利用拉曼光譜儀以及穿透式電子顯微鏡等分析鍺膜，發現鍺的品質提升。藉由鍺材料在可見光及近紅外光波長下具有較矽為佳的光吸收特性，並搭配P型和N型矽形成P-I-N結構的光偵測器，將可得到和現今矽製程相容的光電元件，並具有良好的光電轉換效率與光響應。;With the rapid development of high-speed communication, light transmission has been the mainstream in academic researches due to its better light absorption characteristics at near-infrared wavelength and potential applications in optical communications. This thesis presents the high-quality germanium on SOI for photodetectors as well as its characteristics and measurement. The Ge was made by rapid-melting-growth technique and investigated by Raman spectroscopy and standard electron microscopy analysis. The high-quality Ge was integrated with P-type and N-type silicon pillars for the PIN photodetector. This work demonstrated that high-quality Ge can be obtained by COMS-compatible process with good photoelectric conversion efficiency and photoresponsity.
