本實驗的設計是利用電子束蒸鍍系統(E gun)成長二氧化矽薄膜(SiO2 film)並經過高溫熱處理後在薄膜內形成奈米矽聚集，研究此奈米矽聚集的光激發光螢光頻譜(Photoluminescence)特性並將此薄膜應用在氮化鎵(GaN)藍光發光二極體上(LED)。This experiment is about coating a SiO2 film with GaN LED. The SiO2 flim have been annealing 1000℃ 20min and 1000℃ 60min。 We can prove that there exits Si nanoclusters in the SiO2 film when after annealing 800℃ 10min。 In the PL analysis,we can find a YL band peak from SiO2 film when after annealing。
