本研究以具硫醚碳鏈之聯噻吩為核心，分別與多倂環噻吩耦合，開發可溶性多併環噻吩有機薄膜電晶體材料。為了改善材料之溶解度，將硫醚長碳鏈改為溶解度較好的硫醚支鏈，成功合成出三個碳數不同具硫醚支鏈之 BSTbR 核心。此外，亦開發 BST 之二聚體 BBST新核心。 在 p - type 材料開發方面，以 BSTbR 與 BBST 為核心，在核心兩端各接上四併環噻吩 (TTA) 或三併環噻吩 (DTT)，開發出 DTTA-BBST (1)、DTTA-BSTb8 (2)、DTTA-BSTb24 (3)、DDTT-BBST (4)、DDTT-BSTb8 (5) 以及 DDTT-BSTb24 (6)。 在 n-type 材料開發方面，以新開發之 BSTbR 為核心，在其兩端引入 dicyanomethylene 基團，改變整體分子共振型態，合成出新的 OTFT 材料 BSTQb8 (7)、BSTQb16 (8) 以及 BSTb24 (9)。 利用 UV-vis 和 DPV 探討所開發分子的 HOMO 與 LUMO 能階，藉由 TGA 和 DSC 探討這些新開發材料之熱穩定性。目前，化合物 BSTQb8 (7) 已經由溶液製程製成元件初步測試，具有 n-type 場效性質，載子移動率可達 0.04 cm2/Vs。DTTA-BSTb24 (3) 具有 p-type 場效性質，載子移動率可達 0.02 cm2/Vs。其餘半導體材料之元件仍在待測中。 ;A series of new materials based on thioalkyl bithiopene core have been developed for organic thin film transistors (OTFTs). For comparing with the highest mobility p-type OTFTs material DDTT-BST developed in our group, six new OTFTs, DTTA-BBST (1), DTTA-BSTb8 (2), DTTA-BSTb24 (3), DDTT-BBST (4), DDTT-BSTb8 (5), and DDTT-BSTb24 (6) were synthesized. In order to improve the solubility, three kinds of branch thioalkyl chain of BST quinoidal compounds BSTQb8 (7), BSTQb16 (8), and BSTQb24 (9) were developed. The LUMO energy level of these three quinoidal compounds are measured by DPV and exhibit values all lower than -4.1 eV, and thus these are potential air stable n-type OTFT materials. Currently, BSTQb8 (7) exhibits the highest mobility up to 0.04 cm2/Vs. The optical and electrochemical (HOMO and LUMO) properties of these materials were characterized by UV-vis and DPV. Thermal properties were investigated by TGA. The OTFTs studies of the rest compounds are in progress.
