本研究以電感應耦合電漿蝕刻系統（Inductively coupled plasma ICP）搭配二氧化矽奈米球作為蝕刻阻擋層進行玻璃基板的粗化。並利用粗化基板對提升有機發光二極體（Organic light emitting diode OLED）元件的發光效率。 在乾蝕刻製程中作為蝕刻遮罩的二氧化矽奈米球在整個製程中扮演了非常重要的角色。由於隨蝕刻製程進行奈米球會逐漸消失，在不同的蝕刻參數下奈米球會殘留不同的形態並對應不同的奈米結構，調整蝕刻的時間就可以得到不同的奈米結構。蝕刻完的基板皆以掃瞄式電子顯微鏡（Scanning electron microscope SEM）觀察其形態，可依照結果調整蝕刻參數製作有不同奈米結構的基板。 研究並將該具有奈米結構的基板以熱蒸鍍機台製作成OLED元件並以輝度計進行光學量測比較不同結構的基板對OLED元件的發光效率的影響。本研究比較的三種奈米結構分別為大面積平台結構與小面積平台結構和尖刺結構，從量測結果可以看出尖刺結構的發光效率最好，在輝度1000nit的條件下比對照組提升了46%。且將輝度提升到3000nit時也比對照組提升了41%，研究結果顯示利用奈微米球所製造之具有奈米微結構的基板未來或可作為提升OLED元件發光效率之應用。 ;The thesis of this research is operating inductively coupled plasma (ICP) system to etch single layer SiO2 spheres on the glass substrate to fabricate nanostructure substrates for further organic light emitted diode (OLED) device applications. The SiO2 sphere mask is very important in this etching process. Because the SiO2 sphere mask will extinct as etching recipe going gradually, it can cause different structures when etching time changed. After etching process, we also use scanning electron microscope (SEM) to observe the structure. We can use different recipe to fabricate different nanostructures on glass substrate, and find which nanostructure can let more light go through the patterned glass substrate than the reference substrate. After etching glass substrates, we use these substrates with nanostructure and reference substrate to development OLED devices, and also measure the external quantum efficiency (EQE) of all OLEDs. After measuring OLED devices, we find that the substrate which has spike structure（etching 800 second） enhances 46% at luminance 1000nits and enhances 41% at 3000nits. This research approves that these patterned substrates can be used in further OLED device applications in the future.
